Global Patent Index - EP 2165312 A1

EP 2165312 A1 20100324 - METHOD FOR SEMICONDUCTOR SUBSTRATE INSPECTION

Title (en)

METHOD FOR SEMICONDUCTOR SUBSTRATE INSPECTION

Title (de)

VERFAHREN ZUR HALBLEITERSUBSTRATUNTERSUCHUNG

Title (fr)

PROCÉDÉ POUR UNE INSPECTION D'UN SUBSTRAT À SEMI-CONDUCTEUR

Publication

EP 2165312 A1 20100324 (EN)

Application

EP 08760733 A 20080609

Priority

  • EP 2008057169 W 20080609
  • EP 07011460 A 20070612
  • EP 08760733 A 20080609

Abstract (en)

[origin: WO2008152020A1] A method is provided for detecting anomalies in a semiconductor substrate comprising the steps of: -providing a semiconductor substrate -capturing an inspection image of the substrate -generating a reference image of the substrate -subtracting the reference image from the inspection image, thereby generating a resulting image -examining the resulting image characterized in that the reference image is generated from the inspection image.

IPC 8 full level

G01N 21/95 (2006.01); G06T 7/00 (2006.01)

CPC (source: EP)

G01N 21/9501 (2013.01); G06T 7/001 (2013.01); G01N 2021/8896 (2013.01); G06T 2207/20064 (2013.01); G06T 2207/30148 (2013.01)

Citation (search report)

See references of WO 2008152020A1

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR

Designated extension state (EPC)

AL BA MK RS

DOCDB simple family (publication)

WO 2008152020 A1 20081218; EP 2165312 A1 20100324

DOCDB simple family (application)

EP 2008057169 W 20080609; EP 08760733 A 20080609