EP 2172808 A1 20100407 - Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process
Title (en)
Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process
Title (de)
Metalloxidhaltige folienbildende Zusammensetzung, aus metalloxidhaltiger Folie gebildetes Substrat und Strukturierungsverfahren
Title (fr)
Composition pour formation de film à base d'oxyde de métal, substrat formé de ce film à base d'oxyde de métal, et processus de formation de motifs
Publication
Application
Priority
JP 2008257207 A 20081002
Abstract (en)
There is disclosed a thermosetting metal oxide-containing film-forming composition for forming a metal oxide-containing film to be formed in a multilayer resist process used in lithography, the thermosetting metal oxide-containing film-forming composition comprising, at least: (A) a metal oxide-containing compound obtained by hydrolytic condensation of a hydrolyzable silicon compound and a hydrolyzable metal compound; (B) a thermal crosslinking accelerator; (C) a monovalent, divalent, or higher organic acid having 1 to 30 carbon atoms; (D) a trivalent or higher alcohol; and (E) an organic solvent. There can be provided a metal oxide-containing film-forming composition in a multilayer resist process, in a manner that a film made of the composition allows for formation of an excellent pattern of a photoresist film, the composition is capable of forming a metal oxide-containing film as an etching mask having an excellent dry etching resistance, the composition is excellent in storage stability, and the film made of the composition is removable by a solution used in a removal process; a metal oxide-containing film-formed substrate; and a pattern forming process.
IPC 8 full level
G03F 7/075 (2006.01); C08L 83/04 (2006.01); C09D 183/04 (2006.01); G03F 7/11 (2006.01)
CPC (source: EP KR US)
C09D 183/04 (2013.01 - EP US); G03F 7/039 (2013.01 - KR); G03F 7/075 (2013.01 - KR); G03F 7/0752 (2013.01 - EP US); G03F 7/09 (2013.01 - KR); G03F 7/11 (2013.01 - EP US); C08G 77/58 (2013.01 - EP US)
Citation (applicant)
- JP H0695385 A 19940408 - IBM
- JP H07183194 A 19950721 - SONY CORP
- JP H07181688 A 19950721 - SONY CORP
- JP H05291208 A 19931105 - SONY CORP
- JP 2004349572 A 20041209 - NEC ELECTRONICS CORP
- JP 2005015779 A 20050120 - SHINETSU CHEMICAL CO
- JP 2004157469 A 20040603 - JSR CORP
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- JP 2003084438 A 20030319 - SHINETSU CHEMICAL CO
- WO 0001684 A1 20000113 - NEC CORP [JP], et al
- JP 2000159758 A 20000613 - SHINETSU CHEMICAL CO
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- C. J. BRINKER; G. W. SCHERER: "Sol-Gel Science: The Physics and Chemistry of Sol-Gel Processing", 1990, ACADEMIC PRESS, pages: 120
Citation (search report)
- [IP] EP 2063319 A1 20090527 - SHINETSU CHEMICAL CO [JP]
- [A] EP 1867681 A1 20071219 - SHINETSU CHEMICAL CO [JP]
- [A] EP 1845132 A2 20071017 - SHINETSU CHEMICAL CO [JP]
- [A] EP 1375615 A2 20040102 - SHINETSU CHEMICAL CO [JP]
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
Designated extension state (EPC)
AL BA RS
DOCDB simple family (publication)
EP 2172808 A1 20100407; EP 2172808 B1 20140604; JP 2010085893 A 20100415; JP 5015891 B2 20120829; KR 101335847 B1 20131202; KR 20100038063 A 20100412; TW 201030467 A 20100816; TW I418940 B 20131211; US 2010086872 A1 20100408; US 8029974 B2 20111004
DOCDB simple family (application)
EP 09012329 A 20090929; JP 2008257207 A 20081002; KR 20090093706 A 20091001; TW 98133183 A 20090930; US 46172609 A 20090821