Global Patent Index - EP 2181464 A4

EP 2181464 A4 20150401 - SOLAR CELL HAVING POROUS STRUCTURE AND METHOD FOR FABRICATION THEREOF

Title (en)

SOLAR CELL HAVING POROUS STRUCTURE AND METHOD FOR FABRICATION THEREOF

Title (de)

SOLARZELLE MIT PORÖSER STRUKTUR UND HERSTELLUNGSVERFAHREN DAFÜR

Title (fr)

CELLULE SOLAIRE AYANT UNE STRUCTURE POREUSE ET SON PROCÉDÉ DE FABRICATION

Publication

EP 2181464 A4 20150401 (EN)

Application

EP 08793370 A 20080820

Priority

  • KR 2008004857 W 20080820
  • KR 20070084157 A 20070821
  • KR 20070106215 A 20071022
  • KR 20070131101 A 20071214
  • KR 20080001763 A 20080107

Abstract (en)

[origin: WO2009025502A2] A solar cell comprises a silicon substrate having a first impurity region, and a semiconductor layer having a second impurity region, which has a porous structure consisting of a plurality of holes and is doped with a second impurity different from a first impurity used to form the first impurity region. Especially, the solar cell also includes another semiconductor layer doped with another first impurity having a high concentration, which is interposed between the silicon substrate having the first impurity region and the semiconductor layer having the second impurity region, as well as a passivation layer or an anti-reflective layer formed on an upper surface of the porous structure so as to passivate the silicon substrate.

IPC 8 full level

H01L 31/0236 (2006.01); H01L 31/0216 (2014.01); H01L 31/028 (2006.01); H01L 31/072 (2012.01)

CPC (source: EP)

H01L 31/02168 (2013.01); H01L 31/02363 (2013.01); H01L 31/0284 (2013.01); H01L 31/072 (2013.01); Y02E 10/547 (2013.01)

Citation (search report)

  • [XAYI] US 2005126627 A1 20050616 - HAYASHIDA SHIGEKI [JP]
  • [X] JP H06104463 A 19940415 - HITACHI LTD
  • [Y] EP 0933822 A2 19990804 - SHARP KK [JP]
  • [Y] KOYNOV SVETOSLAV ET AL: "Black nonreflecting silicon surfaces for solar cells", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 88, no. 20, 16 May 2006 (2006-05-16), pages 203107 - 203107, XP012081745, ISSN: 0003-6951, DOI: 10.1063/1.2204573
  • See references of WO 2009025502A2

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR

DOCDB simple family (publication)

WO 2009025502 A2 20090226; WO 2009025502 A3 20090423; EP 2181464 A2 20100505; EP 2181464 A4 20150401; JP 2010527163 A 20100805

DOCDB simple family (application)

KR 2008004857 W 20080820; EP 08793370 A 20080820; JP 2010508317 A 20080820