EP 2187453 B1 20170503 - Light Emitting Device and Method of Manufacturing the Same
Title (en)
Light Emitting Device and Method of Manufacturing the Same
Title (de)
Lichtemittierende Vorrichtung und Verfahren zu ihrer Herstellung
Title (fr)
Dispositif électroluminescent et son procédé de fabrication
Publication
Application
Priority
KR 20080114754 A 20081118
Abstract (en)
[origin: EP2187453A2] Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer (33) formed of a metal between a semiconductor layer (20) and a bonding substrate (31). When the stress relaxation layer is used, stress between the bonding substrate and a growth substrate may be offset due to the flexibility of metal, and accordingly, bending or warpage of the bonding substrate may be reduced or prevented.
IPC 8 full level
H01L 33/12 (2010.01); H01L 33/00 (2010.01)
CPC (source: EP US)
H01L 33/0093 (2020.05 - EP US); H01L 33/12 (2013.01 - EP US)
Citation (examination)
- JP S5852892 A 19830329 - HITACHI LTD
- JP H11307875 A 19991105 - SONY CORP
- KR 20080047838 A 20080530 - SAMSUNG ELECTRO MECH [KR]
- EP 1646092 A2 20060412 - LUMILEDS LIGHTING LLC [US]
- EP 1553640 A1 20050713 - NICHIA CORP [JP]
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
EP 2187453 A2 20100519; EP 2187453 A3 20110525; EP 2187453 B1 20170503; CN 101740694 A 20100616; CN 101740694 B 20150304; KR 101543328 B1 20150811; KR 20100055866 A 20100527; US 2010123158 A1 20100520; US 8222663 B2 20120717
DOCDB simple family (application)
EP 09175236 A 20091106; CN 200910225274 A 20091118; KR 20080114754 A 20081118; US 45879709 A 20090723