EP 2188830 A1 20100526 - EPITAXIAL SOLID-STATE SEMICONDUCTING HETERO-STRUCTURES AND METHOD FOR MAKING SAME
Title (en)
EPITAXIAL SOLID-STATE SEMICONDUCTING HETERO-STRUCTURES AND METHOD FOR MAKING SAME
Title (de)
EPITAKTISCHE HALBLEITENDE FESTKÖRPER-HETEROSTRUKTUREN UND VERFAHREN ZU IHRER HERSTELLUNG
Title (fr)
HÉTÉROSTRUCTURES SEMI-CONDUCTRICES MONOLITHIQUES ÉPITAXIÉES ET LEUR PROCÉDÉ DE FABRICATION
Publication
Application
Priority
- FR 2008051669 W 20080917
- FR 0757652 A 20070918
Abstract (en)
[origin: WO2009047448A1] The invention mainly relates to a method for producing a solid-state semiconducting structure that comprises the steps of: (i) providing a monocrystalline substrate; (ii) epitaxially growing a layer of a monocrystalline oxide on said substrate; (iii) forming a sub-layer via the steps comprising: (a) removing the impurities from the surface of the monocrystalline oxide layer; (b) depositing by slow epitaxial growth a semiconducting sub-layer; and (iv) forming by epitaxial growth a monocrystalline semiconducting layer on the sub-layer thus formed. The invention also relates to solid-state semiconducting hetero-structures thus obtained.
IPC 8 full level
H01L 21/20 (2006.01)
CPC (source: EP US)
H01L 21/02381 (2013.01 - EP US); H01L 21/02488 (2013.01 - EP US); H01L 21/02502 (2013.01 - EP US); H01L 21/02532 (2013.01 - EP US); H01L 21/02543 (2013.01 - EP US); H01L 21/02546 (2013.01 - EP US); H01L 21/02433 (2013.01 - EP US)
Citation (search report)
See references of WO 2009047448A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA MK RS
DOCDB simple family (publication)
FR 2921200 A1 20090320; FR 2921200 B1 20091218; EP 2188830 A1 20100526; JP 2010539723 A 20101216; JP 2015008293 A 20150115; JP 2017028318 A 20170202; JP 6062887 B2 20170118; US 2010289063 A1 20101118; US 8389995 B2 20130305; WO 2009047448 A1 20090416
DOCDB simple family (application)
FR 0757652 A 20070918; EP 08837575 A 20080917; FR 2008051669 W 20080917; JP 2010525404 A 20080917; JP 2014138772 A 20140704; JP 2016205042 A 20161019; US 67854808 A 20080917