Global Patent Index - EP 2195835 A1

EP 2195835 A1 20100616 - METHOD OF FABRICATING A MICROELECTRONIC STRUCTURE INVOLVING MOLECULAR BONDING

Title (en)

METHOD OF FABRICATING A MICROELECTRONIC STRUCTURE INVOLVING MOLECULAR BONDING

Title (de)

VERFAHREN ZUR HERSTELLUNG EINER MIKROELEKTRONISCHEN STRUKTUR UNTER BETEILIGUNG VON MOLEKULARBINDUNG

Title (fr)

PROCÉDÉ DE FABRICATION D'UNE STRUCTURE MICRO-ÉLECTRONIQUE IMPLIQUANT UN COLLAGE MOLÉCULAIRE

Publication

EP 2195835 A1 20100616 (FR)

Application

EP 08869784 A 20081010

Priority

  • FR 2008001427 W 20081010
  • FR 0758282 A 20071012

Abstract (en)

[origin: FR2922359A1] The method involves preparing a donor substrate (1) with a semiconductor material surface, where the material is chosen from one of silicon, germanium, gallium nitride, gallium arsenide, lithium tantalate and lithium niobate. A coating layer (3), made of a material such as oxides, metallic element, metallic alloy, silicon oxynitride and nitride, is formed at the semiconductor material surface by an ion-beam sputtering, where the layer has a free surface. A molecule of the free surface is mounted on a face of a receptor substrate (4).

IPC 8 full level

H01L 21/762 (2006.01)

CPC (source: EP US)

H01L 21/0214 (2013.01 - EP US); H01L 21/02164 (2013.01 - US); H01L 21/0217 (2013.01 - EP US); H01L 21/02181 (2013.01 - EP US); H01L 21/02183 (2013.01 - EP US); H01L 21/02186 (2013.01 - EP US); H01L 21/02266 (2013.01 - US); H01L 21/2007 (2013.01 - EP US); H01L 21/76254 (2013.01 - EP US); H01L 21/02164 (2013.01 - EP); H01L 21/02266 (2013.01 - EP); H01L 21/31604 (2013.01 - US); H01L 21/318 (2013.01 - US)

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR

Designated extension state (EPC)

AL BA MK RS

DOCDB simple family (publication)

FR 2922359 A1 20090417; FR 2922359 B1 20091218; EP 2195835 A1 20100616; JP 2011503839 A 20110127; US 2010216294 A1 20100826; WO 2009087290 A1 20090716

DOCDB simple family (application)

FR 0758282 A 20071012; EP 08869784 A 20081010; FR 2008001427 W 20081010; JP 2010528449 A 20081010; US 68252208 A 20081010