EP 2197028 A1 20100616 - Method for fabricating a dual workfunction semiconductor device and the device made thereof
Title (en)
Method for fabricating a dual workfunction semiconductor device and the device made thereof
Title (de)
Verfahren zur Herstellung eines Halbleiterelements mit dualer Austrittsarbeit und das damit gefertigte Element
Title (fr)
Procédé de fabrication d'un dispositif à semi-conducteur à travail de sortie dual, et dispositif associé
Publication
Application
Priority
US 10536808 P 20081014
Abstract (en)
A method for manufacturing a dual work function semiconductor device and the dual work function semiconductor device made thereof is described. The method comprises providing a semiconductor substrate; providing a gate dielectric layer (104) on and in contact with the semiconductor substrate; forming a metal layer (105) on and in contact with the gate dielectric layer; forming a layer of gate filling material (106) on and in contact with the metal layer; patterning the gate dielectric layer, the metal layer and the gate filling layer to form a first gate stack and a second gate stack; selectively removing the gate filling material only from the second gate stack thereby exposing the underlying metal layer; converting the exposed metal layer into a metal oxide layer (1051).
IPC 8 full level
H01L 21/8234 (2006.01); H01L 21/8238 (2006.01)
CPC (source: EP)
H01L 21/82345 (2013.01); H01L 21/823842 (2013.01)
Citation (applicant)
Z. ZHANG: "Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on Hf02 gate dielectric", VLSI TECH. DIGEST, 2005, pages 50 - 51
Citation (search report)
- [Y] WO 2006021907 A1 20060302 - KONINKL PHILIPS ELECTRONICS NV [NL], et al
- [Y] US 2008173947 A1 20080724 - HOU YONG-TIAN [TW], et al
- [Y] US 2004106249 A1 20040603 - HUOTARI HANNU [FI]
- [A] US 6458695 B1 20021001 - LIN WENHE [SG], et al
- [A] WO 2008072203 A1 20080619 - NXP BV [NL], et al
- [A] US 2004106261 A1 20040603 - HUOTARI HANNU [FI], et al
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA RS
DOCDB simple family (publication)
EP 2197028 A1 20100616; EP 2584601 A1 20130424; EP 2584601 B1 20150819; JP 2010114436 A 20100520; JP 5469988 B2 20140416
DOCDB simple family (application)
EP 09075085 A 20090225; EP 13152000 A 20090225; JP 2009237222 A 20091014