EP 2197034 B1 20120919 - Field effect transistor and display apparatus
Title (en)
Field effect transistor and display apparatus
Title (de)
Feldeffekttransistor und Anzeigevorrichtung
Title (fr)
Transistor à effet de champ et appareil d'affichage
Publication
Application
Priority
- JP 2008317286 A 20081212
- JP 2009222514 A 20090928
Abstract (en)
[origin: EP2197034A2] A field-effect transistor provided with at least a semiconductor layer (11) and a gate electrode (15) disposed over the above-described semiconductor layer (11) with a gate insulating film (12) therebetween, wherein the above-described semiconductor layer (11) includes a first amorphous oxide semiconductor layer (11a) having at least one element selected from the group of Zn and In, and a second amorphous oxide semiconductor layer (11b) having at least one element selected from the group of Ge and Si and at least one element selected from the group of Zn and In. The composition of the above-described first amorphous oxide semiconductor layer (11a) is different from the composition of the above-described second amorphous oxide semiconductor layer (11b).
IPC 8 full level
H01L 29/786 (2006.01)
CPC (source: EP KR US)
H01L 21/02554 (2013.01 - KR); H01L 21/02565 (2013.01 - KR); H01L 29/7869 (2013.01 - EP KR US); H01L 29/78696 (2013.01 - EP KR US); H10K 59/1213 (2023.02 - KR)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
EP 2197034 A2 20100616; EP 2197034 A3 20100630; EP 2197034 B1 20120919; CN 101752428 A 20100623; CN 101752428 B 20111221; EP 2423966 A1 20120229; JP 2010161339 A 20100722; JP 5538797 B2 20140702; KR 101215964 B1 20121227; KR 20100068196 A 20100622; US 2010148170 A1 20100617
DOCDB simple family (application)
EP 09014995 A 20091203; CN 200910258502 A 20091211; EP 11009309 A 20091203; JP 2009222514 A 20090928; KR 20090121626 A 20091209; US 63431909 A 20091209