EP 2202578 A1 20100630 - Etching resist
Title (en)
Etching resist
Title (de)
Ätzresist
Title (fr)
Réserve pour gravure
Publication
Application
Priority
JP 2008330431 A 20081225
Abstract (en)
An etching resist containing a metallic oxynitride. The etching resist of the present invention can be suitably used, for example, in the production of a molded article for surface-working an optical member such as a microlens sheet, a light diffusing sheet, a non-reflective sheet, a sheet for encapsulating photosemiconductor elements, an optical waveguide, an optical disk, or a photosensor.
IPC 8 full level
G03F 7/00 (2006.01); G02B 5/00 (2006.01); G11B 7/24 (2006.01); H01L 21/308 (2006.01)
CPC (source: EP KR US)
B29C 59/022 (2013.01 - KR); B82Y 10/00 (2013.01 - EP KR US); B82Y 40/00 (2013.01 - EP KR US); C23C 14/04 (2013.01 - KR); G02B 3/0012 (2013.01 - KR); G03F 7/0002 (2013.01 - EP KR US); G02B 3/0012 (2013.01 - EP US); Y10T 428/24479 (2015.01 - EP US)
Citation (applicant)
JP 2006216220 A 20060817 - SAMSUNG ELECTRONICS CO LTD, et al
Citation (search report)
- [XI] US 2007026685 A1 20070201 - BAE YONG-KUG [KR], et al
- [X] JP S6446932 A 19890221 - MITSUBISHI ELECTRIC CORP
- [XDAI] JP 2006216220 A 20060817 - SAMSUNG ELECTRONICS CO LTD, et al
- [A] US 2004096617 A1 20040520 - YOO IN-KYEONG [KR], et al
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
Designated extension state (EPC)
AL BA RS
DOCDB simple family (publication)
EP 2202578 A1 20100630; CN 101762978 A 20100630; JP 2010152105 A 20100708; JP 4859145 B2 20120125; KR 20100075743 A 20100705; US 2010167015 A1 20100701; US 8734964 B2 20140527
DOCDB simple family (application)
EP 09015884 A 20091222; CN 200910252535 A 20091223; JP 2008330431 A 20081225; KR 20090128661 A 20091222; US 63834909 A 20091215