Global Patent Index - EP 2205775 A1

EP 2205775 A1 20100714 - REACTIVE ION ETCHING PROCESS FOR ETCHING METALS

Title (en)

REACTIVE ION ETCHING PROCESS FOR ETCHING METALS

Title (de)

REAKTIVIONENÄTZVERFAHREN ZUM ÄTZEN VON METALLEN

Title (fr)

TRAITEMENT DE GRAVURE IONIQUE RÉACTIVE POUR GRAVER DES MÉTAUX

Publication

EP 2205775 A1 20100714 (EN)

Application

EP 07815243 A 20070926

Priority

AU 2007001425 W 20070926

Abstract (en)

[origin: WO2009039552A1] A method of etching a metal by a reactive ion etching process is provided. The etchant gas chemistry for the reactive ion etching process consists essentially of NH3. The process is particularly suitable for etching superalloys, which etch only slowly using conventional metal etching techniques.

IPC 8 full level

C23F 1/12 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01)

CPC (source: EP)

B41J 2/14056 (2013.01); B41J 2/1603 (2013.01); B41J 2/1628 (2013.01); B41J 2/1631 (2013.01); B41J 2/1642 (2013.01); C23F 4/00 (2013.01); B41J 2002/1437 (2013.01); B41J 2002/14387 (2013.01); B41J 2002/14475 (2013.01)

Citation (search report)

See references of WO 2009039552A1

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

Designated extension state (EPC)

AL BA HR MK RS

DOCDB simple family (publication)

WO 2009039552 A1 20090402; EP 2205775 A1 20100714; TW 200914638 A 20090401

DOCDB simple family (application)

AU 2007001425 W 20070926; EP 07815243 A 20070926; TW 97105896 A 20080220