Global Patent Index - EP 2212910 A1

EP 2212910 A1 20100804 - METHOD OF SPLITTING A SUBSTRATE

Title (en)

METHOD OF SPLITTING A SUBSTRATE

Title (de)

VERFAHREN ZUM AUFTEILEN EINES SUBSTRATS

Title (fr)

PROCÉDÉ DE SÉPARATION D'UN SUBSTRAT

Publication

EP 2212910 A1 20100804 (EN)

Application

EP 08843202 A 20081021

Priority

  • EP 2008064200 W 20081021
  • FR 0758502 A 20071023

Abstract (en)

[origin: US8003493B2] A process for splitting a semiconductor substrate having an identification notch on its periphery, by creating a weakened zone in the substrate by implanting atomic species into the substrate while the substrate is held in place on a portion of its periphery during the implanting; and splitting the substrate along the weakened zone by placing the held portion of the substrate in a splitting-wave initiation sector while positioning the notch for initiating a splitting wave followed by the propagation of the wave into the substrate. During splitting the notch is positioned so that it is in a quarter of the periphery of the substrate diametrically opposite the sector for initiating the splitting wave or in the quarter of the periphery of the substrate that is centered on the sector.

IPC 8 full level

H01L 21/762 (2006.01)

CPC (source: EP US)

H01L 21/187 (2013.01 - EP US); H01L 21/76254 (2013.01 - EP US)

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR

Designated extension state (EPC)

AL BA MK RS

DOCDB simple family (publication)

FR 2922681 A1 20090424; AT E500611 T1 20110315; CN 101836287 A 20100915; CN 101836287 B 20121205; DE 602008005350 D1 20110414; EP 2212910 A1 20100804; EP 2212910 B1 20110302; JP 2011501452 A 20110106; JP 5519516 B2 20140611; KR 101490779 B1 20150209; KR 20100072010 A 20100629; US 2010176493 A1 20100715; US 8003493 B2 20110823; WO 2009053355 A1 20090430

DOCDB simple family (application)

FR 0758502 A 20071023; AT 08843202 T 20081021; CN 200880112472 A 20081021; DE 602008005350 T 20081021; EP 08843202 A 20081021; EP 2008064200 W 20081021; JP 2010530427 A 20081021; KR 20107007333 A 20081021; US 67632008 A 20081021