Global Patent Index - EP 2220688 A1

EP 2220688 A1 20100825 - ANTI-REFLECTIVE COATING WITH HIGH OPTICAL ABSORPTION LAYER FOR BACKSIDE CONTACT SOLAR CELLS

Title (en)

ANTI-REFLECTIVE COATING WITH HIGH OPTICAL ABSORPTION LAYER FOR BACKSIDE CONTACT SOLAR CELLS

Title (de)

ANTIREFLEXIONSBESCHICHTUNG MIT SCHICHT MIT HOHER OPTISCHER ABSORPTION FÜR RÜCKSEITENKONTAKTSOLARZELLEN

Title (fr)

REVÊTEMENT ANTIREFLET DOTÉ D'UNE COUCHE DE FORTE ABSORPTION OPTIQUE POUR CELLULES SOLAIRES À CONTACT ARRIÈRE

Publication

EP 2220688 A1 20100825 (EN)

Application

EP 08861605 A 20081202

Priority

  • US 2008085241 W 20081202
  • US 775807 P 20071214
  • US 32587808 A 20081201

Abstract (en)

[origin: US2009151784A1] A multilayer anti-reflection structure for a backside contact solar cell. The anti-reflection structure may be formed on a front side of the backside contact solar cell. The anti-reflection structure may include a passivation level, a high optical absorption layer over the passivation level, and a low optical absorption layer over the high optical absorption layer. The passivation level may include silicon dioxide thermally-grown on a textured surface of the solar cell substrate, which may be an N-type silicon substrate. The high optical absorption layer may be configured to block at least 10% of UV radiation coming into the substrate. The high optical absorption layer may comprise high-k silicon nitride and the low optical absorption layer may comprise low-k silicon nitride.

IPC 8 full level

H01L 31/00 (2006.01)

CPC (source: CN EP US)

H01L 31/02167 (2013.01 - US); H01L 31/02168 (2013.01 - CN EP US); H01L 31/022441 (2013.01 - US); H01L 31/02363 (2013.01 - US); H01L 31/02366 (2013.01 - US); H01L 31/0682 (2013.01 - EP US); Y02E 10/50 (2013.01 - US); Y02E 10/546 (2013.01 - US); Y02E 10/547 (2013.01 - EP US)

Citation (search report)

See references of WO 2009079199A1

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR

Designated extension state (EPC)

AL BA MK RS

DOCDB simple family (publication)

US 2009151784 A1 20090618; US 8198528 B2 20120612; CN 101897032 A 20101124; CN 101897032 B 20160210; CN 105679843 A 20160615; CN 105679843 B 20180522; EP 2220688 A1 20100825; JP 2011518422 A 20110623; JP 2013138250 A 20130711; JP 5221674 B2 20130626; JP 5478750 B2 20140423; KR 101513758 B1 20150420; KR 20100097150 A 20100902; US 2012255606 A1 20121011; US 2014373910 A1 20141225; US 8748736 B2 20140610; US 9577120 B2 20170221; WO 2009079199 A1 20090625

DOCDB simple family (application)

US 32587808 A 20081201; CN 200880120502 A 20081202; CN 201610017854 A 20081202; EP 08861605 A 20081202; JP 2010538044 A 20081202; JP 2013045365 A 20130307; KR 20107012900 A 20081202; US 2008085241 W 20081202; US 201213470576 A 20120514; US 201414271122 A 20140506