EP 2223333 A2 20100901 - METHOD FOR PRODUCING SEMICONDUCTOR CHIPS
Title (en)
METHOD FOR PRODUCING SEMICONDUCTOR CHIPS
Title (de)
VERFAHREN ZUR HERSTELLUNG VON HALBLEITERCHIPS
Title (fr)
PROCÉDÉ POUR PRODUIRE DES PUCES SEMI-CONDUCTRICES
Publication
Application
Priority
- DE 2008002056 W 20081208
- DE 102007061469 A 20071220
- DE 102008014121 A 20080313
Abstract (en)
[origin: WO2009079982A2] The invention relates to method for producing a plurality of semiconductor chips (1). A plurality of semiconductor elements (2) is made available on a substrate (8), the semiconductor elements (2) being interspaced by gaps (25). A structured carrier (33) is made available and comprises a plurality of elevations (35). The structured carrier (33) is positioned relative to the substrate (8) in such a manner that the elevations of the structured carrier (33) extend into the gaps (25) between the semiconductor elements (2), thereby producing a mechanically stable composite (38) which comprises the substrate (8) and the structured carrier (33). The composite (38) is subdivided into a plurality of semiconductor chips (1). The invention further relates to a semiconductor chip.
IPC 8 full level
H01L 21/68 (2006.01); H01L 21/50 (2006.01); H01L 21/60 (2006.01); H01L 21/683 (2006.01); H01S 5/10 (2006.01)
CPC (source: EP US)
H01L 21/6835 (2013.01 - EP US); H01L 24/83 (2013.01 - EP US); H01L 24/97 (2013.01 - EP US); H01L 2221/6835 (2013.01 - EP US); H01L 2221/68354 (2013.01 - EP US); H01L 2221/68363 (2013.01 - EP US); H01L 2221/68368 (2013.01 - EP US); H01L 2221/68377 (2013.01 - EP US); H01L 2224/83001 (2013.01 - EP US); H01L 2224/838 (2013.01 - EP US); H01L 2224/97 (2013.01 - EP US); H01L 2924/01005 (2013.01 - EP US); H01L 2924/01006 (2013.01 - EP US); H01L 2924/01013 (2013.01 - EP US); H01L 2924/01015 (2013.01 - EP US); H01L 2924/01023 (2013.01 - EP US); H01L 2924/0103 (2013.01 - EP US); H01L 2924/01032 (2013.01 - EP US); H01L 2924/01033 (2013.01 - EP US); H01L 2924/01042 (2013.01 - EP US); H01L 2924/01045 (2013.01 - EP US); H01L 2924/01047 (2013.01 - EP US); H01L 2924/01049 (2013.01 - EP US); H01L 2924/0105 (2013.01 - EP US); H01L 2924/01073 (2013.01 - EP US); H01L 2924/01074 (2013.01 - EP US); H01L 2924/01078 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/01082 (2013.01 - EP US); H01L 2924/0132 (2013.01 - EP US); H01L 2924/014 (2013.01 - EP US); H01L 2924/10158 (2013.01 - EP US); H01L 2924/10329 (2013.01 - EP US); H01L 2924/12041 (2013.01 - EP US); H01L 2924/15153 (2013.01 - EP US); H01L 2924/15165 (2013.01 - EP US); H01L 2924/1517 (2013.01 - EP US); H01L 2924/157 (2013.01 - EP US); H01L 2924/15787 (2013.01 - EP US); H01L 2924/19043 (2013.01 - EP US)
Citation (search report)
See references of WO 2009079982A2
Citation (examination)
- US 2003168664 A1 20030911 - HAHN BERTHOLD [DE], et al
- EP 1690300 A2 20060816 - MATSUSHITA ELECTRIC IND CO LTD [JP]
- US 2006001055 A1 20060105 - UENO KAZUHIKO [JP], et al
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA MK RS
DOCDB simple family (publication)
DE 102008014121 A1 20090625; CN 101903995 A 20101201; CN 101903995 B 20120822; EP 2223333 A2 20100901; KR 20100105711 A 20100929; TW 200937783 A 20090901; US 2011175238 A1 20110721; WO 2009079982 A2 20090702; WO 2009079982 A3 20091015
DOCDB simple family (application)
DE 102008014121 A 20080313; CN 200880122155 A 20081208; DE 2008002056 W 20081208; EP 08865326 A 20081208; KR 20107016080 A 20081208; TW 97148007 A 20081210; US 74609608 A 20081208