EP 2225783 A4 20131002 - SEMICONDUCTOR LIGHT EMITTING DEVICE
Title (en)
SEMICONDUCTOR LIGHT EMITTING DEVICE
Title (de)
LICHTEMITTIERENDES HALBLEITERBAUELEMENT
Title (fr)
DISPOSITIF ÉLECTROLUMINESCENT À SEMICONDUCTEURS
Publication
Application
Priority
- KR 2008007666 W 20081224
- KR 20080000841 A 20080103
Abstract (en)
[origin: WO2009084860A2] Embodiments provide a semiconductor light emitting device which comprises a light emitting structure comprising a plurality of compound semiconductor layers, an insulation layer on an outer surface of the light emitting structure, an ohmic layer under the light emitting structure and on an outer surface of the insulation layer, a first electrode layer on the light emitting structure, and a tunnel barrier layer between the first electrode layer and the ohmic layer.
IPC 8 full level
H01L 25/16 (2006.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01)
CPC (source: EP US)
H01L 25/167 (2013.01 - EP US); H01L 33/385 (2013.01 - EP US); H01L 33/44 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)
Citation (search report)
- [YA] DE 102005043649 A1 20060420 - EPISTAR CORP [TW]
- [YA] KR 100613272 B1 20060818 - ITSWELL CO LTD [KR]
- [A] US 2006181828 A1 20060817 - SATO JUNJI [JP], et al
- [A] US 2006157718 A1 20060720 - SEO JUN H [KR], et al
- [A] EP 1750309 A2 20070207 - SAMSUNG ELECTRO MECH [KR], et al
- See references of WO 2009084860A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2009084860 A2 20090709; WO 2009084860 A3 20090903; CN 101911321 A 20101208; CN 101911321 B 20120704; EP 2225783 A2 20100908; EP 2225783 A4 20131002; EP 2225783 B1 20210519; KR 101438811 B1 20140905; KR 20090075076 A 20090708; US 2011001145 A1 20110106; US 8237185 B2 20120807
DOCDB simple family (application)
KR 2008007666 W 20081224; CN 200880123975 A 20081224; EP 08869039 A 20081224; KR 20080000841 A 20080103; US 44711808 A 20081224