Global Patent Index - EP 2226834 A3

EP 2226834 A3 20111130 - Method for physical force assisted cleaning with reduced damage

Title (en)

Method for physical force assisted cleaning with reduced damage

Title (de)

Verfahren zur mit physischer Kraft unterstützten Reinigung mit verringertem Schaden

Title (fr)

Procédé pour nettoyage assisté par force physique avec des dommages réduits

Publication

EP 2226834 A3 20111130 (EN)

Application

EP 10155710 A 20100305

Priority

US 15811809 P 20090306

Abstract (en)

[origin: EP2226834A2] The present invention is related to a method for performing a physical force-assisted cleaning process on a patterned surface of a substrate (1), comprising : a) providing a substrate having at least one patterned surface, b) supplying a cleaning liquid (3) to the patterned surface, c) applying a physical force to the cleaning liquid in contact with the patterned surface, whereby the physical force leads to bubble formation in the cleaning liquid, characterized in that : prior to applying the physical force, an additive is supplied to said surface, and said additive is maintained in contact with said surface for a given time, said additive and said time being chosen so that substantially complete wetting of the surface by the cleaning liquid is achieved.

IPC 8 full level

H01L 21/02 (2006.01)

CPC (source: EP US)

H01L 21/02071 (2013.01 - EP US)

Citation (search report)

  • [XI] EP 0810643 A2 19971203 - CANON KK [JP]
  • [XI] US 2006042651 A1 20060302 - VERHAVERBEKE STEVEN [US], et al
  • [XI] JP 2007150164 A 20070614 - RENESAS TECH CORP
  • [A] US 6124214 A 20000926 - HEMBREE DAVID R [US], et al
  • [XI] VEREECKE G ET AL: "Removal of nano-particles by mixed-fluid jet: evaluation of cleaning performance and comparison with megasonic", DIFFUSION AND DEFECT DATA. SOLID STATE DATA. PART B, SOLID STATEPHENOMENA, VADUZ, LI, vol. 134, 1 January 2008 (2008-01-01), pages 193 - 196, XP008143592, ISSN: 1012-0394
  • [XI] HAGIMOTO Y ET AL: "The effective damage-free megasonic cleaning using N2 dissolved APM", ISSM 2005 IEEE INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING. CONFERENCE PROCEEDINGS (IEEE CAT. NO. 05CH37682) IEEE PISCATAWAY, NJ, USA, 2005, pages 215 - 218, XP002661899, ISBN: 0-7803-9143-8

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

Designated extension state (EPC)

AL BA ME RS

DOCDB simple family (publication)

EP 2226834 A2 20100908; EP 2226834 A3 20111130; EP 2226834 B1 20200429; JP 2010212690 A 20100924; JP 5695833 B2 20150408; US 2010224215 A1 20100909

DOCDB simple family (application)

EP 10155710 A 20100305; JP 2010050864 A 20100308; US 71873210 A 20100305