EP 2232533 A1 20100929 - HIGH ASPECT RATIO HOLES OR TRENCHES
Title (en)
HIGH ASPECT RATIO HOLES OR TRENCHES
Title (de)
LÖCHER ODER GRÄBEN MIT HOHEM ASPEKTVERHÄLTNIS
Title (fr)
TROUS OU TRANCHÉES À RAPPORT LARGEUR/LONGUEUR ÉLEVÉ
Publication
Application
Priority
- IB 2008055579 W 20081230
- EP 08100543 A 20080116
- EP 08871114 A 20081230
Abstract (en)
[origin: WO2009090520A1] The present invention relates to a method to increase throughput when manufacturing high Aspect Ratio (AR) holes or trenches, and high AR holes or trenches obtained by said method. In semiconductor devices holes or trenches are etched, using dry or wet etching techniques, typically dry etching is preferred. According to the present invention, the initial aspect ratio of the trenches is increased by depostion of the layer of the same material as the substate on the walls and the bottom of the trenches. In order to get high- integrated devices use of a third dimension, e.g. of a silicon wafer is necessary to follow the ITRS roadmap. Therein, for instance a deep silicon etch is required and further high aspect structures are designed. Many products with high aspect holes are in production or development like deep trench capacities, Trench MOSFET, DRAM capacities, through wafer via interconnects, etc.
IPC 8 full level
H01L 21/20 (2006.01); H01L 21/306 (2006.01)
CPC (source: EP)
H01L 21/30 (2013.01); H01L 21/76898 (2013.01); H01L 21/02658 (2013.01); H01L 21/8234 (2013.01); H10B 12/00 (2023.02)
Citation (search report)
See references of WO 2009090520A1
Citation (examination)
- US 2007212888 A1 20070913 - KASAI KAZUO [JP], et al
- DE 4420962 A1 19951221 - BOSCH GMBH ROBERT [DE]
- WIDMANN D ET AL: "TECHNOLOGIE HOCHINTEGRIERTER SCHALTUNGEN", 1996, SPRINGER VERLAG, DE, PAGE(S) 181 - 222, ISBN: 978-3-540-59357-7, article "Ätztechnik", XP002260745
- CHOLLET F ET AL: "Si(100) epitaxy by low-temperature UHV-CVD: AFM study of the initial stages of growth", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 157, no. 1, 1 December 1995 (1995-12-01), pages 161 - 167, XP004001551, ISSN: 0022-0248, DOI: 10.1016/0022-0248(95)00382-7
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA MK RS
DOCDB simple family (publication)
DOCDB simple family (application)
IB 2008055579 W 20081230; EP 08871114 A 20081230