EP 2234144 A1 20100929 - Method for manufacturing a power semiconductor device
Title (en)
Method for manufacturing a power semiconductor device
Title (de)
Herstellungsverfahren für Leistungshalbleitervorrichtung
Title (fr)
Procédé de fabrication d'un dispositif semi-conducteur de puissance
Publication
Application
Priority
- EP 09156116 A 20090325
- EP 10155457 A 20100304
Abstract (en)
A method for manufacturing a power semiconductor device, which comprises a first electrical contact (2) on a first main side (21) and a second electrical contact (3) on a second main side (31) opposite the first main side (21) and at least a two-layer structure with layers of different conductivity types, comprises at least the following manufacturing steps: an n doped wafer (1) is provided, a surface layer (4, 4', 4", 4'") of palladium particles is created on the first main side (21), the wafer (1) is irradiated (5) on the first main side (21) with ions, afterwards the palladium particles are diffused (41) into the wafer at a temperature of not more than 750 °C, by which diffusion a first p doped layer (7) is created, afterwards the first and second electrical contacts (2, 3) are created, characterized in that at least the step of the irradiation (5) with ions is performed through a mask (45).
IPC 8 full level
H01L 21/266 (2006.01); H01L 21/22 (2006.01); H01L 21/265 (2006.01)
CPC (source: EP US)
H01L 21/221 (2013.01 - EP US); H01L 21/26506 (2013.01 - EP US); H01L 21/266 (2013.01 - EP US)
Citation (applicant)
- DE 4026797 A1 19920227 - DAIMLER BENZ AG [DE]
- "Dynamic avalanche in diodes with local lifetime control by means of Palladium", MICROELECTRONICS JOURNAL, vol. 39, pages 878 - 883
- IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 27, 2007, pages 1521 - 1526
Citation (search report)
- [Y] DE 4026797 A1 19920227 - DAIMLER BENZ AG [DE]
- [A] EP 0978868 A1 20000209 - ASEA BROWN BOVERI [CH]
- [A] EP 0878849 A2 19981118 - MITEL SEMICONDUCTOR LTD [GB]
- [A] US 2003057522 A1 20030327 - FRANCIS RICHARD [US], et al
- [Y] JAN VOBECKY ET AL: "Radiation-Enhanced Diffusion of Palladium for a Local Lifetime Control in Power Devices", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, vol. 54, no. 6, 1 June 2007 (2007-06-01), pages 1521 - 1526, XP011184977, ISSN: 0018-9383
- [A] TAMBA A ET AL: "CHARACTERISTICS OF BIPOLAR TRANSISTORS WITH VARIOUS DEPTH N+ BURIED LAYERS FORMED BY HIGH ENERGY ION IMPLANTATION", EXTENDED ABSTRACTS OF THE INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS. TOKYO, AUG. 24 - 26, 1988; [PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS], NEW YORK, IEEE, US, vol. CONF. 20, no. 1988, 24 August 1988 (1988-08-24), pages 141 - 144, XP000042517
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
Designated extension state (EPC)
AL BA ME RS
DOCDB simple family (publication)
EP 2234144 A1 20100929; EP 2234144 B1 20180822; CN 101847579 A 20100929; CN 101847579 B 20160803; US 2010248462 A1 20100930; US 8415239 B2 20130409
DOCDB simple family (application)
EP 10155457 A 20100304; CN 201010159615 A 20100325; US 73197710 A 20100325