Global Patent Index - EP 2235236 A2

EP 2235236 A2 20101006 - GALVANIC BATH, METHOD FOR GALVANIC DEPOSITION, AND USE OF A BIPOLAR MEMBRANE FOR SEPARATING IN A GALVANIC BATH

Title (en)

GALVANIC BATH, METHOD FOR GALVANIC DEPOSITION, AND USE OF A BIPOLAR MEMBRANE FOR SEPARATING IN A GALVANIC BATH

Title (de)

GALVANISCHES BAD, VERFAHREN ZUR GALVANISCHEN ABSCHEIDUNG UND VERWENDUNG EINER BIPOLAREN MEMBRAN ZUR SEPARATION IN EINEM GALVANISCHEN BAD

Title (fr)

BAIN GALVANIQUE, PROCÉDÉ DE DÉPÔT GALVANIQUE ET UTILISATION D'UNE MEMBRANE BIPOLAIRE POUR LA SÉPARATION DANS UN BAIN GALVANIQUE

Publication

EP 2235236 A2 20101006 (DE)

Application

EP 08861431 A 20081215

Priority

  • EP 2008010635 W 20081215
  • DE 102007060200 A 20071214

Abstract (en)

[origin: WO2009077146A2] The invention relates to an alkali, galvanic bath for applying zinc or zinc alloys to substrates, wherein the anode chamber and the cathode chamber are separated from each other by a bipolar membrane. The galvanic bath is operated with zinc or zinc alloy baths that can comprise further additives. The invention further relates to a method for galvanic deposition of zinc or zinc alloys on substrates, wherein the substrate is placed in the galvanic bath according to the invention. The invention further relates to the use of bipolar membranes for separating the anode chamber and cathode chamber in galvanic baths, and for avoiding anodic disintegration of organic components of the electrolyte in galvanic baths.

IPC 8 full level

C25D 3/22 (2006.01); C25D 3/56 (2006.01); C25D 17/02 (2006.01)

CPC (source: EP)

C25D 3/22 (2013.01); C25D 3/565 (2013.01); C25D 17/002 (2013.01); C25D 17/02 (2013.01)

Citation (search report)

See references of WO 2009077146A2

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR

Designated extension state (EPC)

AL BA MK RS

DOCDB simple family (publication)

DE 102007060200 A1 20090618; BR PI0820988 A2 20150804; BR PI0820988 B1 20181204; EP 2235236 A2 20101006; EP 2235236 B1 20121003; ES 2396801 T3 20130227; PL 2235236 T3 20130329; WO 2009077146 A2 20090625; WO 2009077146 A3 20100114

DOCDB simple family (application)

DE 102007060200 A 20071214; BR PI0820988 A 20081215; EP 08861431 A 20081215; EP 2008010635 W 20081215; ES 08861431 T 20081215; PL 08861431 T 20081215