EP 2236543 A1 20101006 - POLYSILOXANE COMPOUND, ALKALI-DEVELOPABLE CURABLE COMPOSITION, INSULATING THIN FILM USING THE SAME, AND THIN FILM TRANSISTOR
Title (en)
POLYSILOXANE COMPOUND, ALKALI-DEVELOPABLE CURABLE COMPOSITION, INSULATING THIN FILM USING THE SAME, AND THIN FILM TRANSISTOR
Title (de)
POLYSILOXANE VERBINDUNG, ALKALI ENTWICKELBARE HÄRTBARE ZUSAMMENSETZUNG, ISOLIERENDER DÜNNER FILM UNTER VERWENDUNG DAVON UND DÜNNSCHICHTTRANSISTOR
Title (fr)
COMPOSÉ SILOXANE, COMPOSITION DURCISSABLE DÉVELOPPABLE PAR SOLUTION ALCALINE, FILM MINCE ISOLANT UTILISANT CELLE-CI ET TRANSISTOR À FILM MINCE
Publication
Application
Priority
- JP 2008072181 W 20081205
- JP 2007318932 A 20071210
- JP 2007339485 A 20071228
- JP 2008177079 A 20080707
Abstract (en)
An object of the present invention is to provide a polysiloxane compound that can be developed in an aqueous alkali solution and can yield a cured product or thin film having superior heat-resistant transparency and insulating properties, a curable composition thereof, and a thin film transistor provided with a passivation layer or gate insulator using the same, and the present invention relates to a polysiloxane compound having at least one photopolymerizable functional group in a molecule thereof, and having at least one member selected from the group consisting of an isocyanuric acid backbone structure, a phenolic hydroxyl group and a carboxyl group within the same molecule, to a curable composition containing the polysiloxane compound, and to a cured product thereof.
IPC 8 full level
C08G 77/388 (2006.01); B32B 27/00 (2006.01); C08G 59/20 (2006.01); C08K 5/09 (2006.01); C08K 5/13 (2006.01); C08K 5/3477 (2006.01); C08L 83/08 (2006.01); G03F 7/075 (2006.01); H01L 21/312 (2006.01); H01L 29/786 (2006.01)
CPC (source: EP KR US)
C08G 77/388 (2013.01 - EP KR US); G03F 7/0755 (2013.01 - EP KR US); G03F 7/0757 (2013.01 - EP KR US); H01L 21/02126 (2013.01 - KR US); H01L 21/02216 (2013.01 - KR US); H01L 21/02219 (2013.01 - EP KR US); H01L 21/02282 (2013.01 - KR US); H01L 21/02343 (2013.01 - EP KR US); H01L 21/02348 (2013.01 - EP US); H01L 21/3122 (2013.01 - US); H01L 23/296 (2013.01 - EP US); H01L 29/4908 (2013.01 - EP KR US); H01L 29/78609 (2013.01 - EP KR US); H10K 10/471 (2023.02 - EP KR US); C08K 5/549 (2013.01 - EP US); H01L 21/02126 (2013.01 - EP); H01L 21/02216 (2013.01 - EP); H01L 21/02282 (2013.01 - EP); H01L 27/1248 (2013.01 - EP US); H01L 29/7869 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US); H01L 2924/12044 (2013.01 - EP US)
C-Set (source: EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA MK RS
DOCDB simple family (publication)
EP 2236543 A1 20101006; EP 2236543 A4 20120530; EP 2236543 B1 20140226; CN 101896537 A 20101124; CN 101896537 B 20121024; JP 5491197 B2 20140514; JP WO2009075233 A1 20110428; KR 101800015 B1 20171121; KR 20100108532 A 20101007; TW 200940605 A 20091001; TW I477537 B 20150321; US 2011001190 A1 20110106; US 9464172 B2 20161011; WO 2009075233 A1 20090618
DOCDB simple family (application)
EP 08859663 A 20081205; CN 200880120054 A 20081205; JP 2008072181 W 20081205; JP 2009545399 A 20081205; KR 20107013798 A 20081205; TW 97148070 A 20081210; US 74689108 A 20081205