EP 2238677 A1 20101013 - HIGH-VOLTAGE GENERATOR DEVICE
Title (en)
HIGH-VOLTAGE GENERATOR DEVICE
Title (de)
HOCHSPANNUNGS-GENERATORVORRICHTUNG
Title (fr)
DISPOSITIF DE GENERATION DE HAUTE TENSION
Publication
Application
Priority
- FR 2009050206 W 20090209
- FR 0850786 A 20080207
Abstract (en)
[origin: WO2009101352A1] High-voltage generator device, comprising an inductive-capacitive resonator (RS2) capable of producing a high voltage, means for generating a high-frequency control pulse train, a voltage source (VMT), a capacitor (C1) and a voltage generator (GENI) comprising a switching transistor (M1), the control electrode (G) of which is connected to the output of the means for generating the high-frequency control pulse train, the source (S) of the switching transistor (M1) being connected to ground, and the drain (D) of the switching transistor (M1) being capable of delivering a voltage pulse train to the inductive-capacitive resonator (RS2) in response to the control pulse train received on the control electrode (G) of the switching transistor (M1). The drain (D) of the switching transistor (M1) is connected to the inductive-capacitive resonator (RS2) via an isolating transformer (TRANS), the isolating transformer (TRANS) being connected in parallel with a capacitor (C1), the isolating transformer (TRANS) also being connected to the voltage source (VMT).
IPC 8 full level
H02M 7/523 (2006.01)
CPC (source: EP US)
F02P 3/01 (2013.01 - EP); H02M 7/5233 (2013.01 - EP US); F02P 23/045 (2013.01 - EP)
Citation (search report)
See references of WO 2009101352A1
Citation (examination)
- US 5587630 A 19961224 - DOOLEY KEVIN A [CA]
- EP 0766003 A2 19970402 - MITSUBA CORP [JP]
- US 4083347 A 19780411 - GRATHER GUNTER, et al
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA RS
DOCDB simple family (publication)
FR 2927482 A1 20090814; FR 2927482 B1 20100305; BR PI0907741 A2 20200818; CN 101939903 A 20110105; CN 101939903 B 20140430; EP 2238677 A1 20101013; JP 2011511617 A 20110407; JP 5643114 B2 20141217; KR 101576550 B1 20151210; KR 20100119544 A 20101109; MX 2010008172 A 20100811; RU 2010137120 A 20120320; RU 2488016 C2 20130720; US 2011073058 A1 20110331; US 8387597 B2 20130305; WO 2009101352 A1 20090820
DOCDB simple family (application)
FR 0850786 A 20080207; BR PI0907741 A 20090209; CN 200980104169 A 20090209; EP 09710502 A 20090209; FR 2009050206 W 20090209; JP 2010545540 A 20090209; KR 20107017415 A 20090209; MX 2010008172 A 20090209; RU 2010137120 A 20090209; US 86659209 A 20090209