EP 2243158 B1 20161019 - A process for forming an isolation structure
Title (en)
A process for forming an isolation structure
Title (de)
Herstellungsverfahren für eine Isolationsstruktur
Title (fr)
Procédé de fabrication d'une structure isolante
Publication
Application
Priority
- US 2009000984 W 20090217
- US 6994108 A 20080214
Abstract (en)
[origin: US2008210980A1] Isolated CMOS transistors formed in a P-type semiconductor substrate include an N-type submerged floor isolation region and a filled trench extending downward from the surface of the substrate to the floor isolation region. Together the floor isolation region and the filled trench form an isolated pocket of the substrate which contains a P-channel MOSFET in an N-well and an N-channel MOSFET in a P-well. The substrate does not contain an epitaxial layer, thereby overcoming the many problems associated with fabricating the same.
IPC 8 full level
H01L 21/761 (2006.01); H01L 21/762 (2006.01)
CPC (source: CN EP US)
H01L 21/761 (2013.01 - CN EP US); H01L 21/76243 (2013.01 - CN EP US); H01L 21/76267 (2013.01 - CN EP US); H01L 21/763 (2013.01 - CN EP US); H01L 21/8222 (2013.01 - CN EP US); H01L 21/82285 (2013.01 - CN EP US); H01L 21/823878 (2013.01 - CN EP US); H01L 21/823892 (2013.01 - CN EP US); H01L 27/0825 (2013.01 - CN EP US); H01L 27/0826 (2013.01 - CN EP US); H01L 29/41708 (2013.01 - CN EP US); H01L 29/732 (2013.01 - CN EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR
DOCDB simple family (publication)
US 2008210980 A1 20080904; US 8089129 B2 20120103; CN 102037558 A 20110427; CN 102037558 B 20151125; CN 105206560 A 20151230; CN 105206560 B 20180327; EP 2243158 A2 20101027; EP 2243158 A4 20130821; EP 2243158 B1 20161019; HK 1212819 A1 20160617; JP 2011512672 A 20110421; JP 2014207464 A 20141030; JP 2016164989 A 20160908; JP 5908530 B2 20160426; JP 6349337 B2 20180627; KR 101307695 B1 20130911; KR 20100132953 A 20101220; TW 200945557 A 20091101; TW I462271 B 20141121; WO 2009102499 A2 20090820; WO 2009102499 A3 20091112
DOCDB simple family (application)
US 6994108 A 20080214; CN 200980113255 A 20090217; CN 201510651903 A 20090217; EP 09711355 A 20090217; HK 16100708 A 20160122; JP 2010546797 A 20090217; JP 2014116541 A 20140605; JP 2016058232 A 20160323; KR 20107020401 A 20090217; TW 98104783 A 20090213; US 2009000984 W 20090217