EP 2245666 B1 20150218 - BACKSIDE ILLUMINATED IMAGING SENSOR WITH BACKSIDE P+ DOPED LAYER
Title (en)
BACKSIDE ILLUMINATED IMAGING SENSOR WITH BACKSIDE P+ DOPED LAYER
Title (de)
RÜCKSEITENBELEUCHTETER BILDSENSOR MIT RÜCKSEITIGER P+-DOTIERTER SCHICHT
Title (fr)
CAPTEUR D'IMAGERIE ECLAIRE PAR L'ARRIERE A COUCHE DOPEE P+ ARRIERE
Publication
Application
Priority
- US 2008088254 W 20081223
- US 2736808 P 20080208
- US 14084808 A 20080617
Abstract (en)
[origin: US2009200585A1] A backside illuminated imaging sensor includes a semiconductor layer having a P-type region. A frontside and backside P+ doped layers are formed within the semiconductor layer. An imaging pixel having a photodiode is formed within the semiconductor layer, where the photodiode is an N- region formed within the P-type region of the semiconductor layer between the frontside P+ doped layer and the backside P+ doped layer.
IPC 8 full level
H01L 27/146 (2006.01)
CPC (source: EP US)
H01L 27/1464 (2013.01 - EP US); H01L 27/14643 (2013.01 - EP US); H01L 27/14689 (2013.01 - EP US); H01L 27/14649 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
DOCDB simple family (publication)
US 2009200585 A1 20090813; US 7741666 B2 20100622; CN 101939839 A 20110105; CN 101939839 B 20130116; EP 2245666 A1 20101103; EP 2245666 B1 20150218; TW 200947686 A 20091116; TW I423433 B 20140111; WO 2009099491 A1 20090813
DOCDB simple family (application)
US 14084808 A 20080617; CN 200880126428 A 20081223; EP 08872239 A 20081223; TW 98101260 A 20090114; US 2008088254 W 20081223