EP 2248192 A1 20101110 - OPTOELECTRONIC SEMICONDUCTOR BODY WITH A TUNNEL JUNCTION AND METHOD FOR PRODUCING SUCH A SEMICONDUCTOR BODY
Title (en)
OPTOELECTRONIC SEMICONDUCTOR BODY WITH A TUNNEL JUNCTION AND METHOD FOR PRODUCING SUCH A SEMICONDUCTOR BODY
Title (de)
OPTOELEKTRONISCHER HALBLEITERKÖRPER MIT TUNNELÜBERGANG UND VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN
Title (fr)
CORPS SEMI-CONDUCTEUR OPTOELECTRONIQUE AVEC JONCTION A EFFET TUNNEL ET PROCEDE DE FABRICATION ASSOCIE
Publication
Application
Priority
- DE 2009000282 W 20090226
- DE 102008011849 A 20080229
- DE 102008028036 A 20080612
Abstract (en)
[origin: WO2009106070A1] The invention specifies an optoelectronic semiconductor body having an epitaxial semiconductor layer sequence which has a tunnel junction (2) and an active layer (4) which is intended to emit electromagnetic radiation. The tunnel junction has an intermediate layer (23) between an n-type tunnel junction layer (21) and a p-type tunnel junction layer (22). In one embodiment, the intermediate layer has an n-type barrier layer (231) facing the n-type tunnel junction layer, a p-type barrier layer (233) facing the p-type tunnel junction layer and a middle layer (232). The material composition of the middle layer differs from the material composition of the n-type barrier layer and the p-type barrier layer. In another embodiment, the intermediate layer (23) is alternatively or additionally deliberately provided with defects (6). A method for producing such an optoelectronic semiconductor body is also specified.
IPC 8 full level
H01L 33/00 (2010.01); H01L 33/04 (2010.01); H01L 33/32 (2010.01)
CPC (source: EP US)
H01L 33/04 (2013.01 - EP US); H01L 29/88 (2013.01 - EP US); H01L 33/32 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US); H01S 5/0421 (2013.01 - EP US); H01S 5/3095 (2013.01 - EP US); H01S 5/32341 (2013.01 - EP US)
C-Set (source: EP US)
Citation (search report)
See references of WO 2009106070A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA RS
DOCDB simple family (publication)
DE 102008028036 A1 20090903; CN 101960622 A 20110126; CN 101960622 B 20130109; EP 2248192 A1 20101110; JP 2011513960 A 20110428; KR 20100126458 A 20101201; TW 200945637 A 20091101; TW I404232 B 20130801; US 2011012088 A1 20110120; WO 2009106070 A1 20090903
DOCDB simple family (application)
DE 102008028036 A 20080612; CN 200980107061 A 20090226; DE 2009000282 W 20090226; EP 09715687 A 20090226; JP 2010547955 A 20090226; KR 20107021815 A 20090226; TW 98106280 A 20090227; US 91953209 A 20090226