EP 2248201 A1 20101110 - METHOD FOR PRODUCING A DOPED ORGANIC SEMICONDUCTING LAYER
Title (en)
METHOD FOR PRODUCING A DOPED ORGANIC SEMICONDUCTING LAYER
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER DOTIERTEN ORGANISCHEN HALBLEITENDEN SCHICHT
Title (fr)
PROCÉDÉ DE FABRICATION D UNE COUCHE SEMI-CONDUCTRICE ORGANIQUE DOPÉE
Publication
Application
Priority
- DE 2009000280 W 20090225
- DE 102008011185 A 20080227
Abstract (en)
[origin: WO2009106068A1] A method is provided for producing a doped organic semiconducting layer, comprising the following steps: A) providing a matrix material, B) providing a doping agent complex, and C) simultaneous vapor depositing of the matrix material and the doping agent complex onto a substrate, wherein the doping agent complex is decomposed in step C) and the pure doping agent is embedded in the matrix material.
IPC 8 full level
H10K 99/00 (2023.01)
CPC (source: EP US)
H10K 50/165 (2023.02 - EP US); H10K 71/164 (2023.02 - EP US); H10K 71/30 (2023.02 - EP US); H10K 85/331 (2023.02 - EP US); H10K 85/341 (2023.02 - EP US); H10K 85/657 (2023.02 - EP US); H10K 85/6572 (2023.02 - EP US)
Citation (examination)
DE 102004010954 A1 20051006 - NOVALED GMBH [DE]
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA RS
DOCDB simple family (publication)
DE 102008011185 A1 20090903; CN 101965653 A 20110202; CN 101965653 B 20170405; EP 2248201 A1 20101110; JP 2011513902 A 20110428; JP 5227425 B2 20130703; KR 101541941 B1 20150805; KR 20100118148 A 20101104; US 2011124141 A1 20110526; US 8841153 B2 20140923; WO 2009106068 A1 20090903
DOCDB simple family (application)
DE 102008011185 A 20080227; CN 200980106931 A 20090225; DE 2009000280 W 20090225; EP 09715308 A 20090225; JP 2010547953 A 20090225; KR 20107021471 A 20090225; US 91998909 A 20090225