Global Patent Index - EP 2250126 A2

EP 2250126 A2 20101117 - DOPED TIN TELLURIDES FOR THERMOELECTRIC APPLICATIONS

Title (en)

DOPED TIN TELLURIDES FOR THERMOELECTRIC APPLICATIONS

Title (de)

DOTIERTE ZINNTELLURIDE FÜR THERMOELEKTRISCHE ANWENDUNGEN

Title (fr)

TELLURURES DE ZINC DOPÉS POUR APPLICATIONS THERMOÉLECTRIQUES

Publication

EP 2250126 A2 20101117 (DE)

Application

EP 09708165 A 20090205

Priority

  • EP 2009051298 W 20090205
  • EP 08151149 A 20080207
  • EP 09708165 A 20090205

Abstract (en)

[origin: WO2009098248A2] The p- or n-conductive semiconductor material contains a compound of general formula (I) Sna Pb1-a-(x1+... +xn) A1 x1...An xn (Te1-p-q-r SepSqXr)1+z, in which 0.05 < a < 1, n = 1, where n is a number of chemical elements that differ from Sn and Pb, and independently 1 ppm = x1... xn = 0.05, A1... An differ from one another and are selected from the group of elements Li, Na, K, Rb, Cs, Mg, Ca, Y, Ti, Zr, Hf, Nb, Ta, Cr, Mn, Fe, Cu, Ag, Au, Ga, In, Tl, Ge, Sb, Bi X F, Cl, Br or l, 0 = p = 1, 0 = q = 1, 0 = r = 0.01, - 0.01 = z = 0.01, with the proviso that p + q + r = 1 und a + x1 +... + xn = 1.

IPC 8 full level

C01B 19/00 (2006.01); H01L 23/38 (2006.01); H10N 10/01 (2023.01); H10N 10/852 (2023.01)

CPC (source: EP US)

C01B 19/002 (2013.01 - EP US); C01B 19/007 (2013.01 - EP US); H01L 23/38 (2013.01 - EP US); H10N 10/01 (2023.02 - EP US); H10N 10/852 (2023.02 - EP US); C01P 2006/40 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US); Y02P 20/129 (2015.11 - EP US)

C-Set (source: EP US)

H01L 2924/0002 + H01L 2924/00

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR

Designated extension state (EPC)

AL BA RS

DOCDB simple family (publication)

WO 2009098248 A2 20090813; WO 2009098248 A3 20100225; CA 2715040 A1 20090813; CN 101965313 A 20110202; EP 2250126 A2 20101117; JP 2011514666 A 20110506; JP 5468554 B2 20140409; KR 20110004362 A 20110113; RU 2010137002 A 20120320; TW 200950165 A 20091201; US 2011012069 A1 20110120; US 8772622 B2 20140708

DOCDB simple family (application)

EP 2009051298 W 20090205; CA 2715040 A 20090205; CN 200980108084 A 20090205; EP 09708165 A 20090205; JP 2010545461 A 20090205; KR 20107019118 A 20090205; RU 2010137002 A 20090205; TW 98103903 A 20090206; US 86655209 A 20090205