Global Patent Index - EP 2250664 A4

EP 2250664 A4 20130717 - [100] OR [110] ALIGNED, SEMICONDUCTOR-BASED, LARGE-AREA, FLEXIBLE, ELECTRONIC DEVICES

Title (en)

[100] OR [110] ALIGNED, SEMICONDUCTOR-BASED, LARGE-AREA, FLEXIBLE, ELECTRONIC DEVICES

Title (de)

AUSGERICHTETE AUF HALBLEITERN BASIERENDE GROSSFLÄCHIGE FLEXIBLE ELEKTRONISCHE ANORDNUNGEN

Title (fr)

DISPOSITIFS ÉLECTRONIQUES FLEXIBLES DE GRANDE SURFACE, BASÉS SUR DES SEMI-CONDUCTEURS, DE TEXTURE [100] OU [110] ET ALIGNÉS

Publication

EP 2250664 A4 20130717 (EN)

Application

EP 08871705 A 20080909

Priority

  • US 2008010513 W 20080909
  • US 1145408 A 20080128
  • US 2008002944 W 20080306

Abstract (en)

[origin: WO2009096932A1] Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices,, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

IPC 8 full level

H01L 31/0368 (2006.01); H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 29/06 (2006.01); H01L 29/12 (2006.01); H01L 29/786 (2006.01); H01L 31/032 (2006.01); H01L 31/0392 (2006.01); H01L 31/0687 (2012.01); H01L 31/18 (2006.01)

CPC (source: EP)

B82Y 10/00 (2013.01); H01L 21/02425 (2013.01); H01L 21/02433 (2013.01); H01L 21/02439 (2013.01); H01L 21/02488 (2013.01); H01L 21/02521 (2013.01); H01L 21/02609 (2013.01); H01L 29/0665 (2013.01); H01L 29/0673 (2013.01); H01L 29/127 (2013.01); H01L 29/78603 (2013.01); H01L 31/0368 (2013.01); H01L 31/0687 (2013.01); H01L 31/182 (2013.01); H01L 21/02532 (2013.01); H01L 21/02568 (2013.01); H01L 29/78651 (2013.01); H01L 29/78681 (2013.01); H01L 29/7869 (2013.01); Y02E 10/544 (2013.01); Y02E 10/546 (2013.01); Y02P 70/50 (2015.11)

Citation (search report)

  • [XI] US 6872988 B1 20050329 - GOYAL AMIT [US]
  • [XI] US 2007044832 A1 20070301 - FRITZEMEIER LESLIE G [US]
  • [XI] GOYAL A ET AL: "Low cost, single crystal-like substrates for practical, high efficiency solar cells", AIP CONFERENCE PROCEEDINGS AIP USA, no. 404, 1997, pages 377 - 394, XP002689485, ISSN: 0094-243X
  • See references of WO 2009096932A1

Citation (examination)

  • US 2009038714 A1 20090212 - GOYAL AMIT [US]
  • VISOLY-FISHER I ET AL: "UNDERSTANDING THE BENEFICIAL ROLE OF GRAIN BOUNDARIES IN POLYCRYSTALLINE SOLAR CELLS FROM SINGLE-GRAIN-BOUNDARY SCANNING PROBE MICROSCOPY", ADVANCED FUNCTIONAL MATERIALS, vol. 16, no. 5, 20 March 2006 (2006-03-20), WILEY - V C H VERLAG GMBH & CO. KGAA, DE, pages 649 - 660, XP001241750, ISSN: 1616-301X, DOI: 10.1002/ADFM.200500396
  • VISOLY-FISHER I ET AL: "How polycrystalline devices can outperform single-crystal ones: Thin film CdTe/CdS solar cells", ADVANCED MATERIALS 20040604 WILEY-VCH VERLAG DE, vol. 16, no. 11, 4 June 2004 (2004-06-04), pages 879 - 883, DOI: 10.1002/ADMA.200306624
  • MITCHELL ET AL: "Characterisation of epitaxial TiO2 thin films grown on MgO(001) using atomic layer deposition", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 285, no. 1-2, 15 November 2005 (2005-11-15), pages 208 - 214, XP005123709, ISSN: 0022-0248, DOI: 10.1016/J.JCRYSGRO.2005.08.003
  • HELLWIG O ET AL: "Growth of fcc(111) on bcc(110): new type of epitaxial transition observed for Pd on Cr", SURFACE SCIENCE ELSEVIER NETHERLANDS, vol. 398, no. 3, 20 February 1998 (1998-02-20), pages 379 - 385, ISSN: 0039-6028
  • TIAN W ET AL: "Epitaxial integration of (0001) BiFeO3 with (0001) GaN", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 90, no. 17, 25 April 2007 (2007-04-25), pages 172908 - 172908, XP012094383, ISSN: 0003-6951, DOI: 10.1063/1.2730580
  • OTTOSSON M ET AL: "Chemical vapour deposition of Cu2O on MgO(100) from CuI and N2O: aspects of epitaxy", JOURNAL OF CRYSTAL GROWTH NETHERLANDS, vol. 151, no. 3-4, June 1995 (1995-06-01), pages 305 - 311, ISSN: 0022-0248
  • MACMANUS-DRISCOLL J ET AL: "Understanding and electrochemical control of YBa2Cu3O7-x thin film epitaxy on yttrium stabilized zirconia", JOURNAL OF APPLIED PHYSICS USA, vol. 75, no. 1, 1 January 1994 (1994-01-01), pages 412 - 422, ISSN: 0021-8979
  • BELENCHUK A ET AL: "Growth of (111)-oriented PbTe films on Si(001) using a BaF2 buffer", THIN SOLID FILMS ELSEVIER SWITZERLAND, vol. 358, no. 1-2, 10 January 2000 (2000-01-10), pages 277 - 282, ISSN: 0040-6090
  • QIANG FU ET AL: "Nucleation and growth of Cr clusters and films on (100) SrTiO3 surfaces", THIN SOLID FILMS, vol. 420-421, 2 December 2002 (2002-12-02), ELSEVIER SWITZERLAND, pages 455 - 460, ISSN: 0040-6090
  • PLANK H ET AL: "Molecular alignments in sexiphenyl thin films epitaxially grown on muscovite", THIN SOLID FILMS ELSEVIER SWITZERLAND, vol. 443, no. 1-2, 22 October 2003 (2003-10-22), pages 108 - 114, ISSN: 0040-6090
  • HOSHINO A ET AL: "Epitaxial growth of copper and cobalt phthalocyanines on KCl", JAPANESE JOURNAL OF APPLIED PHYSICS, PART 1 (REGULAR PAPERS, SHORT NOTES & REVIEW PAPERS) JAPAN SOC. APPL. PHYS. JAPAN, vol. 43, no. 7A, July 2004 (2004-07-01), pages 4344 - 4350, ISSN: 0021-4922
  • FILONENKO O ET AL: "Influence of ultrathin templates on the epitaxial growth of CrSi2 on Si(001)", MICROELECTRONIC ENGINEERING ELSEVIER NETHERLANDS, vol. 76, no. 1-4, October 2004 (2004-10-01), pages 324 - 330, ISSN: 0167-9317
  • CHAMBERS S A ET AL: "Growth and structure of MBE grown TiO2 anatase films with rutile nano-crystallites", SURFACE SCIENCE ELSEVIER NETHERLANDS, vol. 601, no. 6, 15 March 2007 (2007-03-15), pages 1582 - 1589, ISSN: 0039-6028
  • NISHIKATA S ET AL: "Polycrystalline domain structure of pentacene thin films epitaxially grown on a hydrogen-terminated Si(111) surface", PHYSICAL REVIEW B (CONDENSED MATTER AND MATERIALS PHYSICS) AMERICAN PHYSICAL SOCIETY USA, vol. 76, no. 16, 15 October 2007 (2007-10-15), pages 165424 - 1, ISSN: 1098-0121
  • DATABASE INSPEC [online] THE INSTITUTION OF ELECTRICAL ENGINEERS, STEVENAGE, GB; 1996, FUJII T ET AL: "Epitaxy of deposited [alpha]-Fe films on high-index Cu substrate planes", Database accession no. 5305691 & 7TH INTERNATIONAL CONFERENCE ON INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, vol. 207-2091, MATERIALS SCIENCE FORUM TRANS TECH PUBLICATIONS SWITZERLAND, pages 233 - 236, ISSN: 0255-5476
  • GLESKOVA H ET AL: "Field-effect mobility of amorphous silicon thin-film transistors under strain", JOURNAL OF NON-CRYSTALLINE SOLIDS ELSEVIER NETHERLANDS, vol. 338-340, 15 June 2004 (2004-06-15), pages 732 - 735, ISSN: 0022-3093
  • SHANKAR P S ET AL: "Bend strain tolerance of YBa2Cu3O7-x-coated conductors fabricated by inclined substrate deposition", SUPERCONDUCTOR SCIENCE & TECHNOLOGY IOP PUBLISHING UK, vol. 19, no. 9, September 2006 (2006-09-01), pages 930 - 933, ISSN: 0953-2048
  • DATABASE INSPEC [online] THE INSTITUTION OF ELECTRICAL ENGINEERS, STEVENAGE, GB; 1 October 2005 (2005-10-01), SUTOH Y ET AL: "Mechanical bending property of YBCO coated conductor by IBAD/PLD", Database accession no. 8784555 & PHYSICA C ELSEVIER NETHERLANDS, vol. 426-431, no. 1, pages 933 - 937, ISSN: 0921-4534, DOI: 10.1016/J.PHYSC.2005.02.086
  • ANONYMOUS: "Bending moments and beam curvatures", UNIVERSITY OF CAMBRIDGE, Retrieved from the Internet <URL:http://www.doitpoms.ac.uk/tlplib/beam_bending/bend_moments.php> [retrieved on 20151018]

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR

DOCDB simple family (publication)

WO 2009096932 A1 20090806; AU 2008349510 A1 20090806; AU 2008349510 B2 20120510; CA 2745269 A1 20090806; CN 101981685 A 20110223; CN 101981685 B 20150520; EP 2250664 A1 20101117; EP 2250664 A4 20130717; HK 1150095 A1 20111028

DOCDB simple family (application)

US 2008010513 W 20080909; AU 2008349510 A 20080909; CA 2745269 A 20080909; CN 200880128188 A 20080909; EP 08871705 A 20080909; HK 11104148 A 20110426