EP 2253018 B1 20160504 - BACKSIDE ILLUMINATED CMOS IMAGING SENSOR WITH INFRARED DETECTING LAYER
Title (en)
BACKSIDE ILLUMINATED CMOS IMAGING SENSOR WITH INFRARED DETECTING LAYER
Title (de)
RÜCKSEITIG BELEUCHTETER CMOS-BILDGEBERSENSOR MIT INFRAROT-DETEKTIONSSCHICHT
Title (fr)
CAPTEUR D'IMAGERIE CMOS ÉCLAIRÉ PAR L'ARRIÈRE À COUCHE DE DÉTECTION D'INFRAROUGE
Publication
Application
Priority
- US 2008088332 W 20081224
- US 2737408 P 20080208
- US 20385808 A 20080903
Abstract (en)
[origin: US2009200589A1] A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer.
IPC 8 full level
H01L 27/146 (2006.01)
CPC (source: EP US)
H01L 27/14603 (2013.01 - EP US); H01L 27/14632 (2013.01 - EP US); H01L 27/14636 (2013.01 - EP US); H01L 27/1464 (2013.01 - EP US); H01L 27/14641 (2013.01 - EP US); H01L 27/14647 (2013.01 - EP US); H01L 27/14652 (2013.01 - EP US); H01L 27/14621 (2013.01 - EP US); H01L 27/14627 (2013.01 - EP US)
Citation (examination)
US 2006054987 A1 20060316 - NII KAZUMI [JP]
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
DOCDB simple family (publication)
US 2009200589 A1 20090813; US 7888763 B2 20110215; CN 101939840 A 20110105; CN 101939840 B 20120620; EP 2253018 A1 20101124; EP 2253018 B1 20160504; TW 200950074 A 20091201; TW I407555 B 20130901; US 2011095188 A1 20110428; US 8329497 B2 20121211; WO 2009099493 A1 20090813
DOCDB simple family (application)
US 20385808 A 20080903; CN 200880126448 A 20081224; EP 08872142 A 20081224; TW 98101389 A 20090115; US 2008088332 W 20081224; US 98445211 A 20110104