EP 2255390 A1 20101201 - METHOD FOR MANUFACTURING A SILICON SURFACE WITH PYRAMIDAL STRUCTURE
Title (en)
METHOD FOR MANUFACTURING A SILICON SURFACE WITH PYRAMIDAL STRUCTURE
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER SILIZIUMOBERFLÄCHE MIT PYRAMIDALER TEXTUR
Title (fr)
PROCÉDÉ POUR FABRIQUER UNE SURFACE EN SILICIUM AYANT UNE TEXTURE PYRAMIDALE
Publication
Application
Priority
- EP 2009001784 W 20090312
- DE 102008014166 A 20080314
Abstract (en)
[origin: WO2009112261A1] The invention relates to a method for manufacturing a silicon surface with a pyramidal structure, in which a silicon wafer containing the silicon surface is dipped into an etching solution. To produce a pyramidal structure that is as homogeneous as possible, according to the invention it is proposed that the silicon surface be treated with ozone prior to coming into contact with the etching solution.
IPC 8 full level
H01L 31/0236 (2006.01); H01L 21/306 (2006.01)
CPC (source: EP US)
H01L 21/30608 (2013.01 - EP US); H01L 31/0236 (2013.01 - US); H01L 31/02363 (2013.01 - EP); Y02E 10/50 (2013.01 - US)
Citation (search report)
See references of WO 2009112261A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA RS
DOCDB simple family (publication)
WO 2009112261 A1 20090917; CN 101965642 A 20110202; CN 101965642 B 20130925; DE 102008014166 B3 20091126; EP 2255390 A1 20101201; KR 101153200 B1 20120618; KR 20100138998 A 20101231; MY 151555 A 20140613; TW 200939336 A 20090916; TW I430354 B 20140311; US 2011045673 A1 20110224
DOCDB simple family (application)
EP 2009001784 W 20090312; CN 200980107791 A 20090312; DE 102008014166 A 20080314; EP 09718901 A 20090312; KR 20107022272 A 20090312; MY PI20103983 A 20090312; TW 98106694 A 20090302; US 73602609 A 20090312