Global Patent Index - EP 2255390 A1

EP 2255390 A1 20101201 - METHOD FOR MANUFACTURING A SILICON SURFACE WITH PYRAMIDAL STRUCTURE

Title (en)

METHOD FOR MANUFACTURING A SILICON SURFACE WITH PYRAMIDAL STRUCTURE

Title (de)

VERFAHREN ZUR HERSTELLUNG EINER SILIZIUMOBERFLÄCHE MIT PYRAMIDALER TEXTUR

Title (fr)

PROCÉDÉ POUR FABRIQUER UNE SURFACE EN SILICIUM AYANT UNE TEXTURE PYRAMIDALE

Publication

EP 2255390 A1 20101201 (DE)

Application

EP 09718901 A 20090312

Priority

  • EP 2009001784 W 20090312
  • DE 102008014166 A 20080314

Abstract (en)

[origin: WO2009112261A1] The invention relates to a method for manufacturing a silicon surface with a pyramidal structure, in which a silicon wafer containing the silicon surface is dipped into an etching solution. To produce a pyramidal structure that is as homogeneous as possible, according to the invention it is proposed that the silicon surface be treated with ozone prior to coming into contact with the etching solution.

IPC 8 full level

H01L 31/0236 (2006.01); H01L 21/306 (2006.01)

CPC (source: EP US)

H01L 21/30608 (2013.01 - EP US); H01L 31/0236 (2013.01 - US); H01L 31/02363 (2013.01 - EP); Y02E 10/50 (2013.01 - US)

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR

Designated extension state (EPC)

AL BA RS

DOCDB simple family (publication)

WO 2009112261 A1 20090917; CN 101965642 A 20110202; CN 101965642 B 20130925; DE 102008014166 B3 20091126; EP 2255390 A1 20101201; KR 101153200 B1 20120618; KR 20100138998 A 20101231; MY 151555 A 20140613; TW 200939336 A 20090916; TW I430354 B 20140311; US 2011045673 A1 20110224

DOCDB simple family (application)

EP 2009001784 W 20090312; CN 200980107791 A 20090312; DE 102008014166 A 20080314; EP 09718901 A 20090312; KR 20107022272 A 20090312; MY PI20103983 A 20090312; TW 98106694 A 20090302; US 73602609 A 20090312