EP 2260526 A2 20101215 - PROCESS FOR FABRICATING A SILICON-BASED ELECTRODE, SILICON-BASED ELECTRODE AND LITHIUM BATTERY COMPRISING SUCH AN ELECTRODE
Title (en)
PROCESS FOR FABRICATING A SILICON-BASED ELECTRODE, SILICON-BASED ELECTRODE AND LITHIUM BATTERY COMPRISING SUCH AN ELECTRODE
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER ELEKTRODE AUF SILICIUMBASIS, ELEKTRODE AUF SILICIUMBASIS UND LITHIUMBATTERIE MIT DERARTIGER ELEKTRODE
Title (fr)
PROCEDE DE FABRICATION D'UNE ELECTRODE A BASE DE SILICIUM, ELECTRODE A BASE DE SILICIUM ET BATTERIE AU LITHIUM COMPRENANT UNE TELLE ELECTRODE
Publication
Application
Priority
- FR 2009000149 W 20090211
- FR 0801032 A 20080226
Abstract (en)
[origin: WO2009112714A2] The invention relates to a process for manufacturing a silicon-based electrode and to a silicon-based electrode. It also relates to a lithium battery comprising such an electrode. The process of the invention consists in fabricating a silicon-based electrode of the type that includes a step of electrochemically depositing silicon on a substrate by cyclic voltammetry in a solution comprising at least one ionic liquid and a silicon precursor of formula SinX2n+2, in which x is Cl, Br or I and n is equal to 1 or 2. The electrode of the invention is particularly applicable in the lithium battery field.
IPC 8 full level
CPC (source: EP US)
C25D 3/665 (2013.01 - EP US); H01M 4/0438 (2013.01 - EP US); H01M 4/1395 (2013.01 - EP US); H01M 4/386 (2013.01 - EP US); Y02E 60/10 (2013.01 - EP)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA RS
DOCDB simple family (publication)
FR 2928036 A1 20090828; FR 2928036 B1 20101224; CN 101981731 A 20110223; EP 2260526 A2 20101215; JP 2011513906 A 20110428; JP 5480823 B2 20140423; US 2011183205 A1 20110728; WO 2009112714 A2 20090917; WO 2009112714 A3 20091217
DOCDB simple family (application)
FR 0801032 A 20080226; CN 200980106606 A 20090211; EP 09718818 A 20090211; FR 2009000149 W 20090211; JP 2010548138 A 20090211; US 91929809 A 20090211