Global Patent Index - EP 2262932 A1

EP 2262932 A1 20101222 - METHOD FOR THE CRYSTALLOGENESIS OF A MATERIAL ELECTRICALLY CONDUCTING AT THE MOLTEN STATE

Title (en)

METHOD FOR THE CRYSTALLOGENESIS OF A MATERIAL ELECTRICALLY CONDUCTING AT THE MOLTEN STATE

Title (de)

VERFAHREN ZUR KRISTALLOGENESE EINES IN SCHMELFLÜSSIGEM ZUSTAND ELEKTRISCH LEITENDEN MATERIALS

Title (fr)

PROCEDE DE CRISTALLOGENESE D'UN MATERIAU ELECTRIQUEMENT CONDUCTEUR A L'ETAT FONDU

Publication

EP 2262932 A1 20101222 (FR)

Application

EP 09715571 A 20090227

Priority

  • EP 2009052393 W 20090227
  • FR 0851259 A 20080227

Abstract (en)

[origin: WO2009106625A1] The invention relates to a method for the crystallogenesis of a material that is electrically conducting at the molten state, by drawing from a molten mass of said material in a crucible (1), that comprises: progressively subjecting the molten material to a decreasing temperature so that a liquid-solid interface is formed; controlling the flatness of the liquid-solid interface of the material; subjecting the molten material, before and during solidification, to an electromagnetic kneading; said method being characterised in that the electromagnetic kneading is obtained by applying an alternating magnetic field. The invention also relates to a device for implementing said method.

IPC 8 full level

C30B 11/00 (2006.01); C30B 29/40 (2006.01); C30B 30/04 (2006.01)

CPC (source: EP US)

C30B 11/003 (2013.01 - EP US); C30B 11/007 (2013.01 - EP US); C30B 29/40 (2013.01 - EP US); C30B 30/04 (2013.01 - EP US); Y10T 117/1024 (2015.01 - EP US); Y10T 117/1092 (2015.01 - EP US)

Citation (search report)

See references of WO 2009106625A1

Citation (examination)

  • EP 1167586 A1 20020102 - COMMISSARIAT ENERGIE ATOMIQUE [FR]
  • OSTROGORSKY ET AL: "Numerical simulation of single crystal growth by submerged heater method", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 104, no. 2, 2 July 1990 (1990-07-02), pages 233 - 238, XP024437848, ISSN: 0022-0248, [retrieved on 19900702], DOI: 10.1016/0022-0248(90)90122-2
  • OSTROGORSKY A G ET AL: "DIFFUSION-CONTROLLED DISTRIBUTION OF SOLUTE IN SN-1% BI SPECIMENS SOLIDIFIED BY THE SUBMERGED HEATER METHOD", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 110, no. 4, 1 April 1991 (1991-04-01), pages 950 - 954, XP000261056, ISSN: 0022-0248, DOI: 10.1016/0022-0248(91)90655-O
  • OSTROGORSKY ET AL: "Numerical simulation of single crystal growth by submerged heater method", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 104, no. 2, 2 July 1990 (1990-07-02), pages 233 - 238, XP027419849, ISSN: 0022-0248, [retrieved on 19900702]
  • MITRIC A ET AL: "Growth of Ga"("1"-"x")In"xSb alloys by Vertical Bridgman technique under alternating magnetic field", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 287, no. 2, 25 January 2006 (2006-01-25), pages 224 - 229, XP028016211, ISSN: 0022-0248, [retrieved on 20060125], DOI: 10.1016/J.JCRYSGRO.2005.10.101

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR

Designated extension state (EPC)

AL BA RS

DOCDB simple family (publication)

FR 2927910 A1 20090828; FR 2927910 B1 20110617; EP 2262932 A1 20101222; JP 2011513168 A 20110428; JP 5777888 B2 20150909; US 2011000424 A1 20110106; US 9493889 B2 20161115; WO 2009106625 A1 20090903

DOCDB simple family (application)

FR 0851259 A 20080227; EP 09715571 A 20090227; EP 2009052393 W 20090227; JP 2010548128 A 20090227; US 91993409 A 20090227