EP 2263969 B1 20171206 - Improved release method for the suspended structure of a NEMS and/or MEMS component
Title (en)
Improved release method for the suspended structure of a NEMS and/or MEMS component
Title (de)
Verbessertes Freigabeverfahren der hängenden Struktur eines nanoelektronischen und/oder mikroelektronischen Bauteils
Title (fr)
Procédé de libération amelioré de la structure suspendue d'un composant NEMS et/ou MEMS
Publication
Application
Priority
FR 0953976 A 20090615
Abstract (en)
[origin: EP2263969A2] The method involves forming an element i.e. semi-conductor, on a supporting layer. A portion of the supporting layer is withdrawn under the element. A passivation layer (107) is formed around the element. The passivation layer and the element are covered by an encapsulation layer (110) that is selectively etched based on a material by xenon difluoride. Contact/interconnection conducting areas (141, 142, 150-1-150-p) are produced. The encapsulation layer is selectively suppressed around the element with regard to the passivation layer to release a suspended structure. The material is polysilicon, amorphous silicon, silicon-germanium, silicon or silicon dioxide. The supporting layer is an insulating layer of a semiconductor-on-insulator substrate.
IPC 8 full level
B81C 1/00 (2006.01)
CPC (source: EP US)
B81C 1/00246 (2013.01 - EP US); B81C 1/00476 (2013.01 - EP US); H03H 3/0073 (2013.01 - EP US); B81B 2203/0109 (2013.01 - EP US); B81C 2201/0109 (2013.01 - EP US); B81C 2201/056 (2013.01 - EP US); B81C 2203/0728 (2013.01 - EP US); H01L 21/84 (2013.01 - EP US); H03H 9/2463 (2013.01 - EP US); H03H 2009/02314 (2013.01 - EP US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
EP 2263969 A2 20101222; EP 2263969 A3 20110309; EP 2263969 B1 20171206; FR 2946636 A1 20101217; FR 2946636 B1 20120323; US 2010317137 A1 20101216; US 8211729 B2 20120703
DOCDB simple family (application)
EP 10165192 A 20100608; FR 0953976 A 20090615; US 79315610 A 20100603