EP 2272091 B1 20121128 - METHOD FOR MAKING MICROSTRUCTURES BY CONVERTING POROUS SILICON INTO POROUS METAL OR CERAMICS
Title (en)
METHOD FOR MAKING MICROSTRUCTURES BY CONVERTING POROUS SILICON INTO POROUS METAL OR CERAMICS
Title (de)
VERFAHREN ZUR HERSTELLUNG VON MIKROSTRUKTUREN DURCH UMWANDELN VON PORÖSEM SILIZIUM IN PORÖSES METALL ODER KERAMIK
Title (fr)
PROCÉDÉ DE FABRICATION DE MICROSTRUCTURES PAR CONVERSION DE SILICIUM POREUX EN MÉTAL POREUX OU EN CÉRAMIQUE POREUSE
Publication
Application
Priority
- EP 2009053197 W 20090318
- EP 08425186 A 20080321
- IT MI20081941 A 20081104
- EP 09723312 A 20090318
Abstract (en)
[origin: WO2009115551A1] A method for making a micro structure (100) is proposed. The method starts with the step of providing a silicon substrate (102), which has a main surface. A porous silicon layer (103) - extending into the silicon substrate from the main surface - is then formed. The method continues by etching the porous silicon layer selectively to obtain a set of projecting microelements of porous silicon (112); each projecting microelement projects from a remaining portion of the silicon substrate ( 106), thereby exposing a corresponding external surface. The projecting microelements are then treated to obtain a set of corresponding conductive (115) or insulating (115 ') microelements; each conductive or insulating microelement is obtained by converting at least a prevalent portion of the porous silicon (extending into the corresponding projecting element from the external surface) into porous metal or ceramics, respectively.
IPC 8 full level
H01L 23/367 (2006.01); H01L 21/68 (2006.01); H01L 23/498 (2006.01); H01L 25/10 (2006.01)
CPC (source: EP US)
H01L 21/6835 (2013.01 - EP US); H01L 23/3107 (2013.01 - EP US); H01L 23/3677 (2013.01 - EP US); H01L 23/49827 (2013.01 - EP US); H01L 25/105 (2013.01 - EP US); H01L 21/3063 (2013.01 - EP US); H01L 21/3065 (2013.01 - EP US); H01L 24/16 (2013.01 - EP US); H01L 24/48 (2013.01 - EP US); H01L 2221/68345 (2013.01 - EP US); H01L 2221/68377 (2013.01 - EP US); H01L 2223/6677 (2013.01 - EP US); H01L 2224/16 (2013.01 - EP US); H01L 2224/16235 (2013.01 - EP US); H01L 2224/4824 (2013.01 - EP US); H01L 2225/1023 (2013.01 - EP US); H01L 2225/1058 (2013.01 - EP US); H01L 2924/00014 (2013.01 - EP US); H01L 2924/01019 (2013.01 - EP US); H01L 2924/01068 (2013.01 - EP US); H01L 2924/01078 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/12032 (2013.01 - EP US); H01L 2924/12042 (2013.01 - EP US); H01L 2924/13055 (2013.01 - EP US); H01L 2924/14 (2013.01 - EP US); H01L 2924/1461 (2013.01 - EP US); H01L 2924/15153 (2013.01 - EP US); H01L 2924/15165 (2013.01 - EP US); H01L 2924/15311 (2013.01 - EP US); H01L 2924/15312 (2013.01 - EP US); H01L 2924/1532 (2013.01 - EP US); H01L 2924/15331 (2013.01 - EP US); H01L 2924/181 (2013.01 - EP US); H01L 2924/19041 (2013.01 - EP US); H01L 2924/30105 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2009115551 A1 20090924; CN 102037560 A 20110427; CN 102037560 B 20120926; EP 2272091 A1 20110112; EP 2272091 B1 20121128; JP 2011517850 A 20110616; US 2011104828 A1 20110505; US 8268640 B2 20120918
DOCDB simple family (application)
EP 2009053197 W 20090318; CN 200980117012 A 20090318; EP 09723312 A 20090318; JP 2011500213 A 20090318; US 93353209 A 20090318