Global Patent Index - EP 2277822 A1

EP 2277822 A1 20110126 - Method for manufacturing a micromechanical element from reinforced silicon

Title (en)

Method for manufacturing a micromechanical element from reinforced silicon

Title (de)

Verfahren zur Herstellung eines mikromechanischen Teils aus verstärktem Silizium

Title (fr)

Procede de fabrication d'une piece micromecanique en silicium renforce

Publication

EP 2277822 A1 20110126 (FR)

Application

EP 09166269 A 20090723

Priority

EP 09166269 A 20090723

Abstract (en)

The method involves micromachining a micromechanical part with a silicon core (1), or a batch of parts in a silicon wafer. A layer of silicon dioxide is formed over the entire surface of the part in one step or different steps by thermal oxidation of the surface at a temperature ranging between 900 to 1200 degree Celsius, to obtain a silicon dioxide thickness that is five times greater than a thickness of native silicon dioxide. The layer is removed by chemical attack. A coating in a material having tribological properties higher than that of crystalline silicon is formed on the surface.

Abstract (fr)

Le procédé de fabrication d'une pièce micromécanique en silicium renforcé comporte les étapes de : - micro-usiner la pièce, ou un lot de pièces dans une plaquette de silicium ; - former, sur toute la surface de la pièce, en une ou plusieurs étapes, une couche de dioxyde de silicium, de manière à obtenir une épaisseur de dioxyde de silicium au moins cinq fois supérieure à l'épaisseur d'un dioxyde de silicium natif ; - retirer la couche de dioxyde de silicium par attaque chimique.

IPC 8 full level

B81C 1/00 (2006.01)

CPC (source: EP US)

B81C 1/00674 (2013.01 - EP US); B81C 1/00682 (2013.01 - US); C23C 8/02 (2013.01 - EP); C23C 8/10 (2013.01 - EP); C23C 8/80 (2013.01 - EP); G04B 13/02 (2013.01 - EP); G04B 15/14 (2013.01 - EP); G04B 31/004 (2013.01 - EP); G04B 31/06 (2013.01 - EP); G04D 3/0069 (2013.01 - EP); G04D 3/0074 (2013.01 - EP); G04D 3/0094 (2013.01 - EP); B81B 2201/035 (2013.01 - EP US); B81C 2201/0178 (2013.01 - EP US); Y10T 29/49986 (2015.01 - EP US)

Citation (applicant)

  • WO 2007000271 A1 20070104 - ETA SA MFT HORLOGERE SUISSE [CH], et al
  • "Semiconductors devices : physics and technology", 1 January 1985, JOHN WILEY & SONS, pages: 341 - 355

Citation (search report)

  • [Y] US 2004018749 A1 20040129 - DORFMAN BENJAMIN F [US]
  • [XY] JUAN W H ET AL: "Controlling sidewall smoothness for micromachined Si mirrors and lenses", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AVS / AIP, MELVILLE, NEW YORK, NY, US, vol. 14, no. 6, 1 December 1996 (1996-12-01), pages 4080 - 4084, XP002200112, ISSN: 1071-1023
  • [Y] TAKAHIRO NAMAZU ET AL: "Evaluation of Size Effect on Mechanical Properties of Single Crystal Silicon by Nanoscale Bending Test Using AFM", JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 9, no. 4, 1 December 2000 (2000-12-01), XP011034595, ISSN: 1057-7157
  • [Y] YI LIU ET AL: "SOI-based capacitive micromechanical resonator with submicron gap-spacing", NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, 2009. NEMS 2009. 4TH IEEE INTERNATIONAL CONFERENCE ON, IEEE, PISCATAWAY, NJ, USA, 5 January 2009 (2009-01-05), pages 130 - 133, XP031470651, ISBN: 978-1-4244-4629-2
  • [A] LEE K K ET AL: "Fabrication of ultralow-loss Si/SiO2 waveguides by roughness reduction", OPTICS LETTERS, OSA, OPTICAL SOCIETY OF AMERICA, WASHINGTON, DC, US, vol. 26, no. 23, 1 December 2001 (2001-12-01), pages 1888 - 1890, XP002244938, ISSN: 0146-9592

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

Designated extension state (EPC)

AL BA RS

DOCDB simple family (publication)

EP 2277822 A1 20110126; CH 701499 A2 20110131; CH 701499 B1 20160915; CN 102471047 A 20120523; CN 102471047 B 20150819; EP 2456714 A1 20120530; EP 2456714 B1 20150318; JP 2012533441 A 20121227; JP 3183864 U 20130606; US 2013029157 A1 20130131; US 8992784 B2 20150331; WO 2011009869 A1 20110127

DOCDB simple family (application)

EP 09166269 A 20090723; CH 11732009 A 20090723; CN 201080032968 A 20100720; EP 10751817 A 20100720; EP 2010060497 W 20100720; JP 2012521023 A 20100720; JP 2013000930 U 20130221; US 201013386049 A 20100720