EP 2279511 A1 20110202 - MEMORY WITH TUNNEL BARRIER AND METHOD FOR READING AND WRITING INFORMATION FROM AND TO THIS MEMORY
Title (en)
MEMORY WITH TUNNEL BARRIER AND METHOD FOR READING AND WRITING INFORMATION FROM AND TO THIS MEMORY
Title (de)
SPEICHER MIT TUNNELBARRIERE SOWIE VERFAHREN ZUM SCHREIBEN UND AUSLESEN VON INFORMATION IN DIESEM SPEICHER
Title (fr)
MÉMOIRE COMPRENANT UNE BARRIÈRE TUNNEL ET PROCÉDÉ D'ÉCRITURE ET DE LECTURE D'INFORMATIONS DANS CETTE MÉMOIRE
Publication
Application
Priority
- DE 2009000525 W 20090417
- DE 102008024078 A 20080517
Abstract (en)
[origin: WO2009140936A1] The invention provides a resistive memory which contains a tunnel barrier. The tunnel barrier is in contact with a memory material which has a memory property that can be varied by means of a write-signal. A change to the memory property has a powerful effect on the tunnel resistance due to the exponential dependence of the tunnel resistance on the parameters of the tunnel barrier, so that the information saved in the memory material can be read out. As memory layer for example, a solid state electrolyte (ion conductor) is suitable, the ions of which can be moved by the write signal relative to the interface with the tunnel barrier. But the memory layer can also be an additional tunnel barrier, for example, the tunnel resistance of which is variable by means of the write signal, for example, by displacement of a metal layer present in this tunnel barrier. The invention also provides a method for saving and reading information to and from a memory.
IPC 8 full level
G11C 13/02 (2006.01); G11C 16/02 (2006.01); G11C 23/00 (2006.01); H01L 27/10 (2006.01); H10N 80/00 (2023.01)
CPC (source: EP US)
G11C 13/0011 (2013.01 - EP US); G11C 13/02 (2013.01 - EP US); G11C 23/00 (2013.01 - EP US); H10B 63/00 (2023.02 - US); H10N 70/245 (2023.02 - EP US); H10N 70/8825 (2023.02 - EP US); H10N 70/8833 (2023.02 - EP US); G11C 2213/11 (2013.01 - EP US); G11C 2213/54 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA RS
DOCDB simple family (publication)
WO 2009140936 A1 20091126; CN 102037517 A 20110427; DE 102008024078 A1 20091217; EP 2279511 A1 20110202; JP 2011523204 A 20110804; US 2011051494 A1 20110303; US 8537590 B2 20130917
DOCDB simple family (application)
DE 2009000525 W 20090417; CN 200980117845 A 20090417; DE 102008024078 A 20080517; EP 09749478 A 20090417; JP 2011508792 A 20090417; US 73671009 A 20090417