EP 2282332 B1 20120627 - Method for fabricating a semiconductor substrate
Title (en)
Method for fabricating a semiconductor substrate
Title (de)
Herstellungsverfahren eines Halbleitersubstrat
Title (fr)
Methode de fabrication d'un substrat semiconducteur
Publication
Application
Priority
EP 09290609 A 20090804
Abstract (en)
[origin: EP2282332A1] The invention relates to method for fabricating a semiconductor on insulator substrate comprising the steps of: a) providing a first semiconductor substrate with a first impurity density of a first impurity type, b) subjecting the first semiconductor substrate to a first thermal treatment to thereby reduce the first impurity density in a modified layer adjacent one main surface of the first semiconductor substrate, c) transferring at least partially the modified layer with the reduced first impurity density onto a second substrate, to thereby obtain a modified second substrate, and d) providing a layer, in particular par epitaxial growth, with a second impurity density of a second impurity type different to the first impurity type. By doing so, a contamination by dopants of the second impurity type of a fabrication line using semiconductor material with dopants of the first impurity type, can be prevented.
IPC 8 full level
H01L 21/762 (2006.01)
CPC (source: EP KR US)
H01L 21/76254 (2013.01 - EP KR US); H01L 27/1203 (2013.01 - KR)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
EP 2282332 A1 20110209; EP 2282332 B1 20120627; CN 101989567 A 20110323; CN 101989567 B 20150304; JP 2011035390 A 20110217; JP 5666842 B2 20150212; KR 101698434 B1 20170120; KR 20110014083 A 20110210; SG 168461 A1 20110228; TW 201110199 A 20110316; TW I492274 B 20150711; US 2011034006 A1 20110210; US 8058149 B2 20111115
DOCDB simple family (application)
EP 09290609 A 20090804; CN 201010223760 A 20100618; JP 2010160843 A 20100715; KR 20100050087 A 20100528; SG 2010038560 A 20100602; TW 99118002 A 20100603; US 81526210 A 20100614