Global Patent Index - EP 2283527 A1

EP 2283527 A1 20110216 - RADIATION-EMITTING THIN-FILM SEMICONDUCTOR CHIP AND METHOD FOR PRODUCTION THEREOF

Title (en)

RADIATION-EMITTING THIN-FILM SEMICONDUCTOR CHIP AND METHOD FOR PRODUCTION THEREOF

Title (de)

STRAHLUNG EMITTIERENDER DÜNNFILM-HALBLEITERCHIP UND VERFAHREN ZUR HERSTELLUNG EINES STRAHLUNG EMITTIERENDEN DÜNNFILM-HALBLEITERCHIPS

Title (fr)

PUCE SEMI-CONDUCTRICE À COUCHES MINCES ÉMETTRICE DE RAYONNEMENT ET PROCÉDÉ DE RÉALISATION D'UNE PUCE SEMI-CONDUCTRICE À COUCHES MINCES

Publication

EP 2283527 A1 20110216 (DE)

Application

EP 09737722 A 20090409

Priority

  • DE 2009000509 W 20090409
  • DE 102008021620 A 20080430

Abstract (en)

[origin: WO2009132614A1] A radiation-emitting thin-film semiconductor chip (10) is described herein having a first region (I) with a first active zone (1), a second region with a second active zone (2) separated laterally by an interstice (11) from the first region (II), said second active zone extends parallel to the first active zone in a different plane, and a compensating layer (5) located in the second region at the level of the first active zone (1), wherein the compensating layer contains no semiconductor material.

IPC 8 full level

H01L 33/00 (2010.01); H01L 27/15 (2006.01); H01L 33/08 (2010.01)

CPC (source: EP)

H01L 33/08 (2013.01); H01L 27/153 (2013.01); H01L 2924/0002 (2013.01)

C-Set (source: EP)

H01L 2924/0002 + H01L 2924/00

Citation (search report)

See references of WO 2009132614A1

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR

Designated extension state (EPC)

AL BA RS

DOCDB simple family (publication)

DE 102008021620 A1 20091105; CN 101971373 A 20110209; CN 101971373 B 20121226; EP 2283527 A1 20110216; JP 2011519171 A 20110630; KR 101601995 B1 20160317; KR 20110007100 A 20110121; US 2011121322 A1 20110526; US 8624269 B2 20140107; WO 2009132614 A1 20091105

DOCDB simple family (application)

DE 102008021620 A 20080430; CN 200980109061 A 20090409; DE 2009000509 W 20090409; EP 09737722 A 20090409; JP 2011506567 A 20090409; KR 20107020183 A 20090409; US 98947009 A 20090409