Global Patent Index - EP 2286470 A1

EP 2286470 A1 20110223 - RADIATION-EMITTING COMPONENT AND METHOD FOR PRODUCING A RADIATION-EMITTING COMPONENT

Title (en)

RADIATION-EMITTING COMPONENT AND METHOD FOR PRODUCING A RADIATION-EMITTING COMPONENT

Title (de)

STRAHLUNGSEMITTIERENDES BAUELEMENT UND VERFAHREN ZUR HERSTELLUNG EINES STRAHLUNGSEMITTIERENDEN BAUELEMENTS

Title (fr)

COMPOSANT ÉMETTEUR DE RAYONNEMENT ET PROCÉDÉ DE FABRICATION D'UN COMPOSANT ÉMETTEUR DE RAYONNEMENT

Publication

EP 2286470 A1 20110223 (DE)

Application

EP 09765426 A 20090508

Priority

  • DE 2009000647 W 20090508
  • DE 102008028886 A 20080618

Abstract (en)

[origin: WO2009152790A1] A radiation-emitting component is provided, which has a carrier (1) and at least one semiconductor chip (2) disposed thereon. The semiconductor chip (2) has an active layer for producing electromagnetic radiation and a first contact layer (21). In order to electrically contact the at least one semiconductor chip (2), the carrier (1) has at least one first and a second contact structure (4a, 4b). The semiconductor chip (2) is connected by the first contact layer (21) to the first contact structure (4a) in an electrically conductive manner. A passivation layer (5) is provided at least in some regions on at least one lateral surface of the semiconductor chip (2). A second contact layer (6), which leads from the surface of the semiconductor chip (2) facing away from the carrier (1) via the passivation layer (5) to the second contact structure (4b), is provided on at least one partial region of the passivation layer (5). The semiconductor chip (2) has no epitaxial growth substrate (10). Furthermore, a method for producing such a component is provided.

IPC 8 full level

H01L 33/38 (2010.01); H01L 33/00 (2010.01); H01L 33/40 (2010.01); H01L 33/48 (2010.01); H01L 33/62 (2010.01)

CPC (source: EP KR)

H01L 24/24 (2013.01 - EP KR); H01L 24/82 (2013.01 - EP KR); H01L 33/385 (2013.01 - EP KR); H01L 33/40 (2013.01 - EP KR); H01L 33/486 (2013.01 - EP KR); H01L 33/62 (2013.01 - EP KR); H01L 33/58 (2013.01 - EP); H01L 2224/24051 (2013.01 - EP); H01L 2224/24226 (2013.01 - EP); H01L 2224/32225 (2013.01 - EP); H01L 2224/73267 (2013.01 - EP); H01L 2924/01005 (2013.01 - EP); H01L 2924/01006 (2013.01 - EP); H01L 2924/01013 (2013.01 - EP); H01L 2924/01023 (2013.01 - EP); H01L 2924/0103 (2013.01 - EP); H01L 2924/01033 (2013.01 - EP); H01L 2924/01049 (2013.01 - EP); H01L 2924/01075 (2013.01 - EP); H01L 2924/01079 (2013.01 - EP); H01L 2924/01327 (2013.01 - EP); H01L 2924/014 (2013.01 - EP); H01L 2924/12036 (2013.01 - EP)

C-Set (source: EP)

  1. H01L 2224/73267 + H01L 2224/32225 + H01L 2224/24226 + H01L 2924/00
  2. H01L 2924/12036 + H01L 2924/00

Citation (examination)

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR

Designated extension state (EPC)

AL BA RS

DOCDB simple family (publication)

DE 102008028886 A1 20091224; DE 102008028886 B4 20240229; CN 101971374 A 20110209; CN 101971374 B 20130313; EP 2286470 A1 20110223; KR 20110020225 A 20110302; WO 2009152790 A1 20091223

DOCDB simple family (application)

DE 102008028886 A 20080618; CN 200980109063 A 20090508; DE 2009000647 W 20090508; EP 09765426 A 20090508; KR 20107020373 A 20090508