EP 2295616 A1 20110316 - HARD COATING LAYER AND METHOD FOR FORMING THE SAME
Title (en)
HARD COATING LAYER AND METHOD FOR FORMING THE SAME
Title (de)
HARTBESCHICHTUNG UND VERFAHREN ZU IHRER BILDUNG
Title (fr)
COUCHE DE REVÊTEMENT DURE ET PROCÉDÉ POUR FORMER CELLE-CI
Publication
Application
Priority
- JP 2009056706 W 20090331
- JP 2008150662 A 20080609
Abstract (en)
Disclosed is a crystalline hard coating layer having no cracks, which exhibits both high hardness and excellent wear resistance at the same time. A method for forming the hard coating layer is also disclosed. A crystalline hard coating layer (3) coating a substrate (2) is formed by a PVD method, and contains Si and C as essential components, while containing an element M (which is one or more elements selected from among group 3A elements, group 4A elements, group 5A elements, group 6A elements, B, Al and Ru) and N as optional components. The crystalline hard coating layer (3) has the following composition: Si x C 1-x-y-z N y M z (where 0.4 ¤ x ¤ 0.6,0 ¤ y ¤ 0.1, and 0 ¤ z ¤ 0.2).
IPC 8 full level
C23C 14/06 (2006.01); B23B 27/14 (2006.01); B23C 5/16 (2006.01); C23C 14/35 (2006.01)
CPC (source: EP KR US)
B23B 27/14 (2013.01 - KR); B23C 5/16 (2013.01 - KR); C04B 35/565 (2013.01 - EP US); C04B 35/581 (2013.01 - EP US); C23C 14/06 (2013.01 - KR); C23C 14/0635 (2013.01 - EP US); C23C 14/0641 (2013.01 - EP US); C23C 14/345 (2013.01 - EP US); C23C 14/35 (2013.01 - EP KR US); C23C 28/044 (2013.01 - EP US); C23C 28/42 (2013.01 - EP US); C04B 2235/3817 (2013.01 - EP US); C04B 2235/3821 (2013.01 - EP US); C04B 2235/3839 (2013.01 - EP US); C04B 2235/3843 (2013.01 - EP US); C04B 2235/3847 (2013.01 - EP US); C04B 2235/3852 (2013.01 - EP US); C04B 2235/3873 (2013.01 - EP US); C04B 2235/3886 (2013.01 - EP US); C04B 2235/79 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA RS
DOCDB simple family (publication)
EP 2295616 A1 20110316; EP 2295616 A4 20111102; EP 2295616 B1 20190605; BR PI0913221 A2 20160119; BR PI0913221 B1 20191203; CN 102057073 A 20110511; CN 102057073 B 20130911; DE 112009001396 T5 20110428; ES 2730880 T3 20191113; IL 209811 A0 20110228; IL 209811 A 20140630; JP 2009293111 A 20091217; JP 4388582 B2 20091224; KR 101211256 B1 20121211; KR 20110018417 A 20110223; PL 2295616 T3 20200131; PT 2295616 T 20190627; US 2011086233 A1 20110414; US 8460803 B2 20130611; WO 2009150887 A1 20091217
DOCDB simple family (application)
EP 09762318 A 20090331; BR PI0913221 A 20090331; CN 200980121455 A 20090331; DE 112009001396 T 20090331; ES 09762318 T 20090331; IL 20981110 A 20101207; JP 2008150662 A 20080609; JP 2009056706 W 20090331; KR 20117000373 A 20090331; PL 09762318 T 20090331; PT 09762318 T 20090331; US 99708209 A 20090331