EP 2308104 A4 20140430 - SEMICONDUCTOR LIGHT CONVERTING CONSTRUCTION
Title (en)
SEMICONDUCTOR LIGHT CONVERTING CONSTRUCTION
Title (de)
HALBLEITER-LICHTUMWANDLUNGSKONSTRUKTION
Title (fr)
CONSTRUCTION DE CONVERSION DE LUMIERE A SEMI-CONDUCTEUR
Publication
Application
Priority
- US 2009046835 W 20090610
- US 7590408 P 20080626
Abstract (en)
[origin: WO2009158191A2] Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a semiconductor potential well for converting at least a portion of light at a first wavelength to light at a longer second wavelength; an outer layer that is disposed on the semiconductor potential well and has a first index of refraction; and a structured layer that is disposed on the outer layer and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the outer layer and a plurality of openings that expose the outer layer. The semiconductor light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the outer layer in the plurality of openings. The overcoat has a third index of refraction that is greater than the second index of refraction.
IPC 8 full level
H01L 33/44 (2010.01); H01L 33/50 (2010.01); H01L 33/08 (2010.01)
CPC (source: EP KR)
H01L 33/08 (2013.01 - EP); H01L 33/44 (2013.01 - EP KR); H01L 33/502 (2013.01 - EP); H01L 2933/0091 (2013.01 - EP)
Citation (search report)
- [E] WO 2009075972 A2 20090618 - 3M INNOVATIVE PROPERTIES CO [US], et al
- [Y] US 2007284565 A1 20071213 - LEATHERDALE CATHERINE A [US], et al
- [Y] US 2006186802 A1 20060824 - COK RONALD S [US], et al
- [A] US 2006124917 A1 20060615 - MILLER THOMAS J [US], et al
- [A] EP 1653519 A1 20060503 - MITSUBISHI HEAVY IND LTD [JP]
- [A] GUO S P ET AL: "Distributed Bragg reflectors for visible range applications based on (Zn,Cd,Mg)Se lattice matched to InP", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 77, no. 25, 18 December 2000 (2000-12-18), pages 4107 - 4109, XP012026930, ISSN: 0003-6951, DOI: 10.1063/1.1334650
- See references of WO 2009158191A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2009158191 A2 20091230; WO 2009158191 A3 20100325; CN 102124583 A 20110713; CN 102124583 B 20130619; EP 2308104 A2 20110413; EP 2308104 A4 20140430; JP 2011526079 A 20110929; KR 20110031953 A 20110329
DOCDB simple family (application)
US 2009046835 W 20090610; CN 200980132160 A 20090610; EP 09770725 A 20090610; JP 2011516415 A 20090610; KR 20117001361 A 20090610