EP 2316130 A2 20110504 - OPTOELECTRONIC SEMICONDUCTOR ELEMENT
Title (en)
OPTOELECTRONIC SEMICONDUCTOR ELEMENT
Title (de)
OPTOELEKTRONISCHES HALBLEITERBAUELEMENT
Title (fr)
DISPOSITIF SEMICONDUCTEUR OPTO-ELECTRONIQUE
Publication
Application
Priority
- DE 2009001548 W 20091102
- DE 102008057140 A 20081113
Abstract (en)
[origin: WO2010054622A2] The invention relates to an optoelectronic component (1) comprising a connection support (2), on which at least two radiation-emitting semiconductor chips (3) are located and a conversion element (4) that is fixed to the connection support (2), said conversion element (4) spanning the semiconductor chips (3) in such a way that the chips (3) are surrounded by the conversion element (4) and the connection support (2). At least two of the radiation-emitting semiconductor chips (3) differ from one another with respect to the wavelengths of the electromagnetic radiation that they emit during operation.
IPC 8 full level
H01L 25/075 (2006.01); H01L 33/00 (2010.01); H01L 25/16 (2006.01); H01L 33/50 (2010.01)
CPC (source: EP KR US)
H01L 25/0753 (2013.01 - EP US); H01L 33/48 (2013.01 - KR); H01L 25/167 (2013.01 - EP US); H01L 33/50 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US); H01L 2924/09701 (2013.01 - EP US)
Citation (search report)
See references of WO 2010054622A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
Designated extension state (EPC)
AL BA RS
DOCDB simple family (publication)
DE 102008057140 A1 20100520; CN 102217065 A 20111012; CN 102217065 B 20140702; EP 2316130 A2 20110504; JP 2012508970 A 20120412; JP 5544369 B2 20140709; KR 20110084307 A 20110721; US 2011272713 A1 20111110; US 8558259 B2 20131015; WO 2010054622 A2 20100520; WO 2010054622 A3 20100708
DOCDB simple family (application)
DE 102008057140 A 20081113; CN 200980145491 A 20091102; DE 2009001548 W 20091102; EP 09798867 A 20091102; JP 2011535869 A 20091102; KR 20117013299 A 20091102; US 200913128706 A 20091102