Global Patent Index - EP 2317533 B1

EP 2317533 B1 20140122 - Capacitive micro-switch comprising a charge drain made up of directed nanotubes on the bottom electrode and method for manufacturing same

Title (en)

Capacitive micro-switch comprising a charge drain made up of directed nanotubes on the bottom electrode and method for manufacturing same

Title (de)

Kapazitiver Mikroschalter, der einen Ladungsablass aus Nanoröhren umfasst, die auf einer Steuerelektrode gerichtet sind, und Herstellungsverfahren

Title (fr)

Micro-commutateur capacitif comportant un drain de charges à base de nanotubes orientés sur l'électrode basse et procédé de fabrication

Publication

EP 2317533 B1 20140122 (FR)

Application

EP 10189620 A 20101102

Priority

FR 0905260 A 20091103

Abstract (en)

[origin: EP2317533A1] The micro-switch has an upper metallic membrane (45) and a radio frequency signal line (42) separated by gas or empty thickness. An electrical insulating layer (44) is located on the signal line. A charge drain (43) is constituted of conductor nanotubes e.g. carbon nanotubes, oriented to a surface of the signal line. The drain is surrounded by the electrical insulating layer, where the layer is made of dielectric material. An independent claim is also included for a method for fabricating a micro-switch.

IPC 8 full level

H01H 59/00 (2006.01); H01P 1/12 (2006.01)

CPC (source: EP US)

H01H 59/0009 (2013.01 - EP US); H01P 1/127 (2013.01 - EP US); H01H 2059/0018 (2013.01 - EP US); H01H 2300/036 (2013.01 - EP US)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

EP 2317533 A1 20110504; EP 2317533 B1 20140122; FR 2952048 A1 20110506; FR 2952048 B1 20111118; US 2011100793 A1 20110505; US 8497751 B2 20130730

DOCDB simple family (application)

EP 10189620 A 20101102; FR 0905260 A 20091103; US 93808810 A 20101102