EP 2319093 A1 20110511 - METHOD AND APPARATUS FOR MANUFACTURING A FUNCTIONAL LAYER ON A SEMICONDUCTOR DEVICE
Title (en)
METHOD AND APPARATUS FOR MANUFACTURING A FUNCTIONAL LAYER ON A SEMICONDUCTOR DEVICE
Title (de)
VERFAHREN UND ANORDNUNG ZUM HERSTELLEN EINER FUNKTIONSSCHICHT AUF EINEM HALBLEITERBAUELEMENT
Title (fr)
PROCÉDÉ ET DISPOSITIF DE FABRICATION D'UNE COUCHE FONCTIONELLE SUR UN DISPOSITIF SEMI-CONDUCTEUR
Publication
Application
Priority
- EP 2009061003 W 20090826
- DE 102008044485 A 20080828
Abstract (en)
[origin: WO2010023225A1] The invention relates to a method for producing at least one functional layer on at least one region of a surface of a semiconductor component by applying a liquid to at least the one region, wherein the functional layer has a layer thickness d1 and the liquid required for forming the functional layer having the thickness di has a layer thickness d2. In order that functional layers having a desired thin and uniform thickness are produced in a reproducible manner, it is proposed that the liquid is applied to the at least one region of the surface in excess with a layer thickness d3 where d3 > d2 and that subsequently, either with the semiconductor component moved in translational fashion or with the semiconductor component arranged in stationary fashion, excess liquid is removed from the surface in a contactless manner to an extent such that the liquid layer has the thickness d2 or approximately the thickness d2.
IPC 8 full level
H01L 21/228 (2006.01); H01L 21/316 (2006.01); H01L 21/318 (2006.01); H01L 21/67 (2006.01); H01L 31/18 (2006.01); H01L 21/314 (2006.01)
CPC (source: EP US)
H01L 21/228 (2013.01 - EP US); H01L 21/316 (2016.02 - US); H01L 21/3185 (2016.02 - US); H01L 21/6715 (2013.01 - EP US); H01L 31/18 (2013.01 - EP US); H01L 21/02164 (2013.01 - EP US); H01L 21/02167 (2013.01 - EP US); H01L 21/0217 (2013.01 - EP US); H01L 21/02271 (2013.01 - EP US); H01L 21/02282 (2013.01 - EP US); H01L 21/3148 (2016.02 - US)
Citation (search report)
See references of WO 2010023225A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
Designated extension state (EPC)
AL BA RS
DOCDB simple family (publication)
WO 2010023225 A1 20100304; CN 102138226 A 20110727; DE 102008044485 A1 20100401; EP 2319093 A1 20110511; JP 2012501083 A 20120112; US 2011165726 A1 20110707
DOCDB simple family (application)
EP 2009061003 W 20090826; CN 200980133396 A 20090826; DE 102008044485 A 20080828; EP 09782220 A 20090826; JP 2011524365 A 20090826; US 200913059383 A 20090826