Global Patent Index - EP 2319097 A1

EP 2319097 A1 20110511 - OPTOELECTRONIC SEMICONDUCTOR CHIP

Title (en)

OPTOELECTRONIC SEMICONDUCTOR CHIP

Title (de)

OPTOELEKTRONISCHER HALBLEITERCHIP

Title (fr)

PUCE À SEMI-CONDUCTEUR OPTOÉLECTRONIQUE

Publication

EP 2319097 A1 20110511 (DE)

Application

EP 09776012 A 20090723

Priority

  • DE 2009001038 W 20090723
  • DE 102008045028 A 20080829

Abstract (en)

[origin: WO2010022694A1] A semiconductor chip is specified, comprising an active layer (2) provided for emitting an electromagnetic radiation, and a two-dimensional arrangement of structure units (5), which is disposed downstream of the active layer in a main emission direction (6) of the semiconductor chip. The structure units (5) are arranged in an arbitrary statistical distribution. A semiconductor chip having a directional emission characteristic can be realized by means of such an arrangement of structure units.

IPC 8 full level

H01L 33/00 (2010.01)

CPC (source: EP KR US)

H01L 33/10 (2013.01 - KR); H01L 33/22 (2013.01 - EP KR US); H01L 33/405 (2013.01 - EP US); H01L 33/46 (2013.01 - EP US)

Citation (search report)

See references of WO 2010022694A1

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

Designated extension state (EPC)

AL BA RS

DOCDB simple family (publication)

DE 102008045028 A1 20100304; DE 102008045028 B4 20230316; CN 102138229 A 20110727; CN 102138229 B 20151125; EP 2319097 A1 20110511; KR 20110056386 A 20110527; TW 201023406 A 20100616; TW I427826 B 20140221; US 2011297982 A1 20111208; WO 2010022694 A1 20100304

DOCDB simple family (application)

DE 102008045028 A 20080829; CN 200980133895 A 20090723; DE 2009001038 W 20090723; EP 09776012 A 20090723; KR 20117005942 A 20090723; TW 98128749 A 20090827; US 200913061514 A 20090723