EP 2325905 A3 20110622 - Semiconductor light-emitting device and method for manufacturing same
Title (en)
Semiconductor light-emitting device and method for manufacturing same
Title (de)
Dispositif électroluminescent semi-conducteur et son procédé de fabrication
Title (fr)
Lichtemittierendes Halbleiterbauelement und Herstellungsverfahren
Publication
Application
Priority
- JP 2009263639 A 20091119
- JP 2010055487 A 20100312
Abstract (en)
[origin: EP2325905A2] A semiconductor light-emitting device includes: a first semiconductor layer (12) having a first major surface (10) and a second major surface which is an opposite side to the first major surface (10); a second semiconductor layer (13) provided on the second major surface of the first semiconductor layer (12) and including a light-emitting layer (63); a first electrode (15) provided on the second major surface of the first semiconductor layer (12); a second electrode (16) provided on a surface of the second semiconductor layer (13), the surface being an opposite side to the first semiconductor layer (12); an insulating film (14) provided on a side surface of the second semiconductor layer (13), and an edge (50a) of an interface (50) between the first semiconductor layer (12) and the second semiconductor layer (13); and a metal film (20) provided on the insulating film (14) from the second electrode (16) side toward the edge (50a) of the interface (50).
IPC 8 full level
H01L 33/40 (2010.01); H01L 33/46 (2010.01); H01L 33/00 (2010.01); H01L 33/44 (2010.01); H01L 33/50 (2010.01); H01L 33/62 (2010.01)
CPC (source: EP US)
H01L 33/405 (2013.01 - EP US); H01L 33/0093 (2020.05 - EP US); H01L 33/44 (2013.01 - EP US); H01L 33/486 (2013.01 - EP US); H01L 33/50 (2013.01 - EP US); H01L 33/505 (2013.01 - EP US); H01L 33/62 (2013.01 - EP US); H01L 2224/16 (2013.01 - EP US); H01L 2933/0016 (2013.01 - EP US)
Citation (search report)
- [XYI] US 5952681 A 19990914 - CHEN HSING [TW]
- [X] WO 2006068297 A1 20060629 - MATSUSHITA ELECTRIC IND CO LTD [JP], et al
- [E] WO 2010132139 A1 20101118 - CREE INC [US], et al
- [Y] US 6331450 B1 20011218 - UEMURA TOSHIYA [JP]
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
Designated extension state (EPC)
AL BA ME RS
DOCDB simple family (publication)
EP 2325905 A2 20110525; EP 2325905 A3 20110622; EP 2325905 B1 20170111; JP 2011129861 A 20110630; JP 5414579 B2 20140212; TW 201119093 A 20110601; TW I443878 B 20140701; US 2011114986 A1 20110519; US 8278676 B2 20121002
DOCDB simple family (application)
EP 10157159 A 20100322; JP 2010055487 A 20100312; TW 99129515 A 20100901; US 72883710 A 20100322