EP 2326602 A1 20110601 - METHOD FOR MANUFACTURING A MASK HAVING SUBMILLIMETRIC APERTURES FOR A SUBMILLIMETRIC ELECTRICALLY CONDUCTIVE GRID, AND MASK AND SUBMILLIMETRIC ELECTRICALLY CONDUCTIVE GRID
Title (en)
METHOD FOR MANUFACTURING A MASK HAVING SUBMILLIMETRIC APERTURES FOR A SUBMILLIMETRIC ELECTRICALLY CONDUCTIVE GRID, AND MASK AND SUBMILLIMETRIC ELECTRICALLY CONDUCTIVE GRID
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER MASKE MIT SUBMILLIMETRISCHEN ÖFFNUNGEN FÜR EIN SUBMILLIMETRISCHES ELEKTRISCH LEITFÄHIGES GITTER UND MASKE UND SUBMILLIMETRISCHES ELEKTRISCH LEITFÄHIGES GITTER
Title (fr)
PROCEDE DE FABRICATION D'UN MASQUE A OUVERTURES SUBMILLIMETRIQUES POUR GRILLE ELECTROCONDUCTRICE SUBMILLIMETRIQUE, MASQUE ET GRILLE ELECTROCONDUCTRICE SUBMILLIMETRIQUE
Publication
Application
Priority
- FR 2009051816 W 20090924
- FR 0856429 A 20080924
Abstract (en)
[origin: WO2010034945A1] The invention relates to a method for manufacturing a mask having submillimetric apertures (1, 10), wherein: a first solution of colloidal nanoparticles in a first solvent is deposited for a mask layer, the particles having a given vitreous transition temperature Tg; the mask layer, referred to as the first mask layer, is dried at a temperature lower than said temperature Tg until a mask having a two-dimensional array of submillimetric apertures is obtained, having a substantially straight edge and defining a so-called array mask area; a solid mask area is formed through liquid deposition of a second mask layer onto the surface thereof, the solid mask area being adjacent and contacting the array mask area; and/or at least one cache area is formed, said cache area contacting the array mask area; and/or a mask area, filled through liquid filling of the apertures of a part of the array mask area, is formed after drying the first mask layer. The invention also relates to the mask and to the electrically conductive grid thus obtained.
IPC 8 full level
C03C 17/00 (2006.01); C03C 17/06 (2006.01); C03C 17/09 (2006.01); C03C 17/22 (2006.01); H01L 51/10 (2006.01); H01L 51/52 (2006.01); H01L 51/56 (2006.01)
CPC (source: EP KR US)
B82Y 20/00 (2013.01 - EP US); B82Y 30/00 (2013.01 - EP US); C03C 17/002 (2013.01 - EP KR US); C03C 17/06 (2013.01 - EP KR US); C03C 17/09 (2013.01 - EP US); C03C 17/22 (2013.01 - EP US); H05B 33/26 (2013.01 - KR); H10K 50/805 (2023.02 - EP KR US); H10K 71/00 (2023.02 - EP KR US); C03C 2217/252 (2013.01 - EP KR US); C03C 2218/116 (2013.01 - EP KR US); C03C 2218/15 (2013.01 - EP KR US); C03C 2218/34 (2013.01 - EP KR US); H10K 2102/331 (2023.02 - EP KR US); Y10T 428/24273 (2015.01 - US); Y10T 428/24331 (2015.01 - US)
Citation (search report)
See references of WO 2010034945A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
Designated extension state (EPC)
AL BA RS
DOCDB simple family (publication)
FR 2936360 A1 20100326; FR 2936360 B1 20110401; CN 102164868 A 20110824; EP 2326602 A1 20110601; JP 2012503852 A 20120209; JP 5677961 B2 20150225; KR 20110060946 A 20110608; US 2011250387 A1 20111013; US 8697186 B2 20140415; WO 2010034945 A1 20100401
DOCDB simple family (application)
FR 0856429 A 20080924; CN 200980137636 A 20090924; EP 09752408 A 20090924; FR 2009051816 W 20090924; JP 2011528401 A 20090924; KR 20117009189 A 20090924; US 200913120292 A 20090924