EP 2326603 A1 20110601 - METHOD FOR MANUFACTURING A MASK HAVING SUBMILLIMETRIC APERTURES FOR A SUBMILLIMETRIC ELECTRICALLY CONDUCTIVE GRID, MASK HAVING SUBMILLIMETRIC APERTURES, AND SUBMILLIMETRIC ELECTRICALLY CONDUCTIVE GRID
Title (en)
METHOD FOR MANUFACTURING A MASK HAVING SUBMILLIMETRIC APERTURES FOR A SUBMILLIMETRIC ELECTRICALLY CONDUCTIVE GRID, MASK HAVING SUBMILLIMETRIC APERTURES, AND SUBMILLIMETRIC ELECTRICALLY CONDUCTIVE GRID
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER MASKE MIT SUBMILLIMETRISCHEN ÖFFNUNGEN FÜR EIN SUBMILLIMETRISCHES ELEKTRISCH LEITFÄHIGES GITTER, MASKE MIT SUBMILLIMETRISCHEN ÖFFNUNGEN UND SUBMILLIMETRISCHES ELEKTRISCH LEITFÄHIGES GITTER
Title (fr)
PROCEDE DE FABRICATION D'UN MASQUE A OUVERTURES SUBMILLIMETRIQUES POUR GRILLE ELECTROCONDUCTRICE SUBMILLIMETRIQUE, MASQUE A OUVERTURES SUBMILLIMETRIQUES, GRILLE ELECTROCONDUCTRICE SUBMILLIMETRIQUE
Publication
Application
Priority
- FR 2009051815 W 20090924
- FR 0856427 A 20080924
Abstract (en)
[origin: WO2010034944A1] The invention relates to a method for manufacturing a mask (1) having submillimetric apertures (10), wherein: - a solution of stabilized colloidal nanoparticles dispersed in a solvent is deposited for a mask layer, the particles having a given vitreous transition temperature Tg; - the mask layer is dried at a temperature lower than said temperature Tg until a mask having a two-dimensional array of submillimetric apertures is obtained with substantially straight mask area edges in a so-called array mask area; - a free mask area is formed on said surface through the mechanical and/or optical shrinkage of at least one peripheral portion of the array mask area. The invention also relates to said array mask (1) and to the grid with an electrically conductive solid area thus obtained.
IPC 8 full level
C03C 17/00 (2006.01); C03C 17/06 (2006.01); C03C 17/23 (2006.01); H01L 51/10 (2006.01); H01L 51/52 (2006.01); H01L 51/56 (2006.01)
CPC (source: EP KR US)
B05D 1/322 (2013.01 - US); C03C 17/002 (2013.01 - EP KR US); C03C 17/06 (2013.01 - EP KR US); C03C 17/23 (2013.01 - EP KR US); H05B 33/26 (2013.01 - KR); H05K 3/048 (2013.01 - US); H10K 50/30 (2023.02 - KR); H10K 50/805 (2023.02 - EP KR US); H10K 50/81 (2023.02 - US); H10K 50/813 (2023.02 - EP KR US); H10K 71/00 (2023.02 - EP KR); H10K 71/621 (2023.02 - EP KR); B05D 1/38 (2013.01 - US); B05D 3/12 (2013.01 - US); B05D 5/00 (2013.01 - US); C03C 2218/328 (2013.01 - EP KR US); C03C 2218/34 (2013.01 - EP KR US); Y10T 29/49002 (2015.01 - EP US); Y10T 428/24273 (2015.01 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
Designated extension state (EPC)
AL BA RS
DOCDB simple family (publication)
FR 2936358 A1 20100326; FR 2936358 B1 20110121; CN 102164869 A 20110824; CN 102164869 B 20141231; EP 2326603 A1 20110601; JP 2012503851 A 20120209; KR 20110060941 A 20110608; US 2011240343 A1 20111006; US 9114425 B2 20150825; WO 2010034944 A1 20100401
DOCDB simple family (application)
FR 0856427 A 20080924; CN 200980137638 A 20090924; EP 09752407 A 20090924; FR 2009051815 W 20090924; JP 2011528400 A 20090924; KR 20117009074 A 20090924; US 200913120265 A 20090924