EP 2328194 A1 20110601 - MAGNETIC RECORDING ELEMENT, MAGNETIC MEMORY CELL, AND MAGNETIC RANDOM ACCESS MEMORY
Title (en)
MAGNETIC RECORDING ELEMENT, MAGNETIC MEMORY CELL, AND MAGNETIC RANDOM ACCESS MEMORY
Title (de)
MAGNETISCHES AUFZEICHNUNGSELEMENT, MAGNETISCHE SPEICHERZELLE UND MAGNETISCHER RAM-SPEICHER
Title (fr)
ÉLÉMENT D'ENREGISTREMENT MAGNÉTIQUE, CELLULE DE MÉMOIRE MAGNÉTIQUE, ET MÉMOIRE VIVE MAGNÉTIQUE
Publication
Application
Priority
- JP 2009064380 W 20090817
- JP 2008242998 A 20080922
Abstract (en)
A low-power consumption non-volatile memory employing an electric field write magnetic recording element is provided. A multiferroic layer 301 is provided adjacent to a magnetic recording layer 2002, and by applying an electric field to the multiferroic layer to control the dielectric state of the multiferroic, the magnetization direction of the magnetic recording layer is controlled and information is written. Reading is performed by electrically detecting the magnetization direction of the magnetic recording layer by way of a magnetoresistive effect.
IPC 8 full level
G11C 11/15 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01)
CPC (source: EP KR US)
G11C 11/161 (2013.01 - EP US); G11C 11/1673 (2013.01 - EP US); G11C 11/1675 (2013.01 - EP US); H01L 27/105 (2013.01 - KR); H10B 99/00 (2023.02 - KR); H10N 50/10 (2023.02 - EP KR US); H10B 61/22 (2023.02 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
Designated extension state (EPC)
AL BA RS
DOCDB simple family (publication)
EP 2328194 A1 20110601; EP 2328194 A4 20130710; JP 5366961 B2 20131211; JP WO2010032574 A1 20120209; KR 101222252 B1 20130115; KR 20110040917 A 20110420; US 2011134689 A1 20110609; US 8189370 B2 20120529; WO 2010032574 A1 20100325
DOCDB simple family (application)
EP 09814419 A 20090817; JP 2009064380 W 20090817; JP 2010529693 A 20090817; KR 20117003274 A 20090817; US 200913058202 A 20090817