EP 2331294 A1 20110615 - METHOD FOR MEASURING THE THICKNESS OF A DISCOIDAL WORKPIECE
Title (en)
METHOD FOR MEASURING THE THICKNESS OF A DISCOIDAL WORKPIECE
Title (de)
VERFAHREN ZUM MESSEN DER DICKE EINES SCHEIBENFÖRMIGEN WERKSTÜCKS
Title (fr)
PROCÉDÉ DE MESURE DE L'ÉPAISSEUR D'UNE PIÈCE À USINER EN FORME DE DISQUE
Publication
Application
Priority
- EP 2009006275 W 20090829
- DE 102008049973 A 20081001
Abstract (en)
[origin: WO2010037452A1] The invention relates to a method for measuring the thickness of a discoidal workpiece serving as a substrate for electronic components, comprising the steps: Infrared radiation is applied to the top surface of the workpiece, wherein a first radiation component is reflected at the top surface and a second radiation component penetrates the workpiece thickness, is reflected at the bottom surface of the workpiece, and exits the top surface of the workpiece again, the first and the second radiation components interfere with each other forming an interference pattern, and the optical workpiece thickness between the top surface and bottom surface of the workpiece is determined using the interference pattern. According to the invention, the mechanical workpiece thickness is determined from a measurement of the intensity of the reflected and/or transmitted infrared radiation, considering the optical workpiece thickness.
IPC 8 full level
B24B 37/04 (2012.01); G01B 11/06 (2006.01); H01L 21/66 (2006.01)
CPC (source: EP KR US)
B24B 37/013 (2013.01 - EP US); B24B 37/04 (2013.01 - KR); B24B 49/12 (2013.01 - EP US); G01B 11/06 (2013.01 - EP KR US); H01L 22/00 (2013.01 - KR); H01L 22/12 (2013.01 - EP US); H01L 22/26 (2013.01 - EP US)
Citation (search report)
See references of WO 2010037452A1
Citation (examination)
- DATABASE INSPEC [online] THE INSTITUTION OF ELECTRICAL ENGINEERS, STEVENAGE, GB; November 1976 (1976-11-01), MANIFACIER J C ET AL: "A simple method for the determination of the optical constants n, k and the thickness of a weakly absorbing thin film", Database accession no. 988547 & JOURNAL OF PHYSICS E (SCIENTIFIC INSTRUMENTS) UK, vol. 9, no. 11, pages 1002 - 1004, ISSN: 0022-3735, DOI: 10.1088/0022-3735/9/11/032
- QUANDOU WANG ET AL: "<title>Interferometric thickness calibration of 300 mm silicon wafers</title>", PROCEEDINGS OF SPIE, vol. 6024, 9 December 2005 (2005-12-09), pages 602426 - 602426-5, XP055090969, ISSN: 0277-786X, DOI: 10.1117/12.666951
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
Designated extension state (EPC)
AL BA RS
DOCDB simple family (publication)
WO 2010037452 A1 20100408; CN 102171000 A 20110831; EP 2331294 A1 20110615; JP 2012504752 A 20120223; KR 101311320 B1 20130925; KR 20110063831 A 20110614; US 2011222071 A1 20110915
DOCDB simple family (application)
EP 2009006275 W 20090829; CN 200980139034 A 20090829; EP 09778204 A 20090829; JP 2011529460 A 20090829; KR 20117008648 A 20090829; US 200913121787 A 20090829