EP 2332145 B1 20190814 - SYMMETRIC STT-MRAM BIT CELL DESIGN
Title (en)
SYMMETRIC STT-MRAM BIT CELL DESIGN
Title (de)
SYMMETRISCHER STT-MRAM ZELLENENTWURF
Title (fr)
MODELE DE CELLULE SYMÉTRIQUE POUR UNE STT-MRAM
Publication
Application
Priority
- US 2009054760 W 20090824
- US 20016108 A 20080828
Abstract (en)
[origin: WO2010025106A1] A symmetric Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) bit cell and STT-MRAM bit cell array are disclosed. The STT-MRAM bit cell includes a poly silicon layer, a magnetic tunnel junction (MTJ) storage element, and a bottom electrode (BE) plate.
IPC 8 full level
G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01)
CPC (source: EP KR US)
G11C 11/16 (2013.01 - KR); G11C 11/161 (2013.01 - EP US); H01L 27/0207 (2013.01 - EP US); H10B 61/00 (2023.02 - KR); H10B 61/22 (2023.02 - EP US); H10N 50/01 (2023.02 - KR); H10N 59/00 (2023.02 - KR)
Citation (examination)
US 2007159870 A1 20070712 - TANIZAKI HIROAKI [JP], et al
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
WO 2010025106 A1 20100304; CN 102119422 A 20110706; CN 102119422 B 20150211; EP 2332145 A1 20110615; EP 2332145 B1 20190814; JP 2012501547 A 20120119; JP 2014195100 A 20141009; JP 6076940 B2 20170208; KR 101263241 B1 20130510; KR 20110048561 A 20110511; TW 201017661 A 20100501; TW 201342373 A 20131016; TW I409812 B 20130921; US 2010054027 A1 20100304; US 8264052 B2 20120911
DOCDB simple family (application)
US 2009054760 W 20090824; CN 200980131285 A 20090824; EP 09791840 A 20090824; JP 2011525123 A 20090824; JP 2014099589 A 20140513; KR 20117006792 A 20090824; TW 102122890 A 20090828; TW 98129157 A 20090828; US 20016108 A 20080828