Global Patent Index - EP 2332183 A1

EP 2332183 A1 20110615 - METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT

Title (en)

METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT

Title (de)

VERFAHREN ZUR HERSTELLUNG EINES OPTOELEKTRONISCHEN HALBLEITERBAUELEMENTS UND OPTOELEKTRONISCHES HALBLEITERBAUELEMENT

Title (fr)

PROCÉDÉ DE FABRICATION D UN COMPOSANT OPTOÉLECTRONIQUE À SEMI-CONDUCTEURS ET COMPOSANT OPTOÉLECTRONIQUE À SEMI-CONDUCTEURS

Publication

EP 2332183 A1 20110615 (DE)

Application

EP 09740635 A 20090908

Priority

  • DE 2009001269 W 20090908
  • DE 102008050573 A 20081006

Abstract (en)

[origin: WO2010040331A1] The invention relates to a method for producing an optoelectronic semiconductor component, wherein an epitaxial layer sequence (5), a contact layer (6), and a barrier layer (7) are applied by epitaxial growth onto an epitaxial growth substrate (1), and the epitaxial layer sequence (5) is structured to form individual semiconductor bodies (8) by generating furrows (9) in the epitaxial layer sequence (5). Subsequently, a dielectric layer (11) and preferably a mirror layer (21) are applied at least to the lateral edges (10) of the semiconductor bodies (8) exposed in the furrows (9). Thereafter, the semiconductor bodies (8) are connected to a carrier body (14) using a solder layer (13) on a side facing away from the epitaxial growth substrate (1), wherein the furrows (9) between the semiconductor bodies (8) are filled by the solder layer (13), and the epitaxial growth substrate (1) is then removed.

IPC 8 full level

H01L 33/00 (2010.01)

CPC (source: EP KR US)

H01L 33/0093 (2020.05 - EP US); H01L 33/12 (2013.01 - KR); H01L 33/44 (2013.01 - KR); H01L 33/44 (2013.01 - EP US); H01L 33/46 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)

C-Set (source: EP US)

H01L 2924/0002 + H01L 2924/00

Citation (search report)

See references of WO 2010040331A1

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

Designated extension state (EPC)

AL BA RS

DOCDB simple family (publication)

DE 102008050573 A1 20100408; CN 102171845 A 20110831; CN 102171845 B 20130731; EP 2332183 A1 20110615; JP 2012504875 A 20120223; KR 20110082540 A 20110719; US 2011186953 A1 20110804; US 8367438 B2 20130205; WO 2010040331 A1 20100415

DOCDB simple family (application)

DE 102008050573 A 20081006; CN 200980139340 A 20090908; DE 2009001269 W 20090908; EP 09740635 A 20090908; JP 2011530360 A 20090908; KR 20117010118 A 20090908; US 200913122578 A 20090908